Light induced frustration of etching in Fe doped LiNbO3
Barry, I.E., Eason, R.W. and Cook, G. (1999) Light induced frustration of etching in Fe doped LiNbO3. Applied Surface Science, 143, (1-4), 328-331. (doi:10.1016/S0169-4332(99)00087-2).
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We report the results of light-induced frustration of the normal etching behaviour observed when LiNbO3 is immersed in a solution of HF and HNO3 acids. Light of wavelength 488 nm, from an air-cooled 100 mW Ar ion laser, is incident on the rear surface (+z-face) of a thin Fe-doped LiNbO3 sample, whose front face (-z-face) is in contact with the etchant solution. At power densities of > 100 W /cm2, etching is suppressed through light-induced charge migration. Below this power density, partial suppression occurs, leading to submicron scale features, whose orientation follows the crystal symmetry.
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
University Structure - Pre August 2011 > School of Physics and Astronomy
|Date Deposited:||11 Mar 2010|
|Last Modified:||01 Jun 2011 15:49|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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