Planar laser waveguides of Ti:sapphire, Nd:GGG and Nd:YAG grown by pulsed laser deposition
Planar laser waveguides of Ti:sapphire, Nd:GGG and Nd:YAG grown by pulsed laser deposition
Highly efficient laser action is demonstrated in epitaxially grown Nd:GGG and Ti:sapphire layers. Waveguide losses as low as 0.5 dB/cm are achieved in films of low particulate content, high homogeneity and improved surface morphology obtained by optimized pulsed laser deposition (PLD) configurations. Low threshold laser emission is observed at 800 nm for Ti:sapphire, and at 1060 nm and 937 nm for Nd:GGG waveguides, with slope efficiencies of 26% and 20% respectively. These results verify the versatility of PLD schemes in the fabrication of novel optoelectronic structures.
514-519
Vainos, N.A.
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Grivas, C.
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Fotakis, C.
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Eason, R.W.
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Anderson, A.A.
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Gill, D.S.
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Shepherd, D.P.
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Jelínek, M.
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Lančok, J.
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Sonsky, J.
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May 1998
Vainos, N.A.
e4f22637-2f1c-4dec-af67-d059261dd5b2
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
Fotakis, C.
51429efa-20ae-4c9d-a8c3-954431cf8182
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Anderson, A.A.
646395a3-662e-4ad2-9a45-50ec63847687
Gill, D.S.
0837886a-5999-478f-8b32-ea1996611c3c
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Jelínek, M.
058ae7ba-cd86-4f99-990e-2e8f78cd4484
Lančok, J.
d5b8205a-97c8-439f-8178-aa82d5a9d479
Sonsky, J.
99dbbc92-69f3-4ae2-bc6b-504c20e24e29
Vainos, N.A., Grivas, C., Fotakis, C., Eason, R.W., Anderson, A.A., Gill, D.S., Shepherd, D.P., Jelínek, M., Lančok, J. and Sonsky, J.
(1998)
Planar laser waveguides of Ti:sapphire, Nd:GGG and Nd:YAG grown by pulsed laser deposition.
Applied Surface Science, 127-129, .
(doi:10.1016/S0169-4332(97)00684-3).
Abstract
Highly efficient laser action is demonstrated in epitaxially grown Nd:GGG and Ti:sapphire layers. Waveguide losses as low as 0.5 dB/cm are achieved in films of low particulate content, high homogeneity and improved surface morphology obtained by optimized pulsed laser deposition (PLD) configurations. Low threshold laser emission is observed at 800 nm for Ti:sapphire, and at 1060 nm and 937 nm for Nd:GGG waveguides, with slope efficiencies of 26% and 20% respectively. These results verify the versatility of PLD schemes in the fabrication of novel optoelectronic structures.
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Published date: May 1998
Identifiers
Local EPrints ID: 78937
URI: http://eprints.soton.ac.uk/id/eprint/78937
ISSN: 0169-4332
PURE UUID: d1df00a9-7db1-4ad9-9759-0f529f2f265c
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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:34
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Contributors
Author:
N.A. Vainos
Author:
C. Grivas
Author:
C. Fotakis
Author:
A.A. Anderson
Author:
D.S. Gill
Author:
D.P. Shepherd
Author:
M. Jelínek
Author:
J. Lančok
Author:
J. Sonsky
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