Intra-cavity frequency doubling of an electrically pumped edge-emitting 980 nm laseR diode with PPLN
Li, Kang, Yao, Aiyun, Copner, N.J., Gawith, C.B.E. and Knight, Ian G. (2009) Intra-cavity frequency doubling of an electrically pumped edge-emitting 980 nm laseR diode with PPLN. In, European Conference on Lasers and Electro-Optics (CLEO/Europe-EQEC), Munich, Germany, 14 - 19 Jun 2009.
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Description/Abstract
The growing trend for laser-based projection displays makes intra-cavity frequency doubling (ICFD) of electrically and optically surface emitting diode lasers in the near IR region become more interesting [1-3]. In this letter, we demonstrate for the first time to our knowledge ICFD of an edge emitting laser diode using a periodically poled lithium niobate (PPLN) bulk crystal, which has the potential to be scalable to high production volumes and low costs with immense implication for industrial applications
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Related URLs: | http://www.orc.soton.ac.uk/vie...l?pid=4333 http://www.cleoeurope.org/ |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| ePrint ID: | 78968 |
| Deposited On: | 19 Mar 2010 |
| Last Modified: | 22 Dec 2010 14:18 |
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