UV laser-induced poling inhibition in lithium niobate crystals


Ying, Y.J., Sones, C.L., Steigerwald, H., Johann, F., Soergel, E., Buse, K., Eason, R.W. and Mailis, S. (2009) UV laser-induced poling inhibition in lithium niobate crystals. In, Conference on Lasers and Electro-optics - European Quantum Electronics Conference (CLEO/Europe-EQEC 2009), Munich, Germany, 1pp.

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Description/Abstract

The development of methods for ferroelectric domain engineering in lithium niobate (LN) is of special importance as it not only enables the fabrication of efficient non-linear devices (PPLN) [1] but also constitutes a very effective path towards micro-structuring of this important ferroelectric crystal [2]. UV laser-induced poling inhibition is a process whereby domain inversion is prohibited as a result of previous UV laser irradiation of the crystal. The effect was first demonstrated using a frequency-doubled argon ion laser (244 nm) to irradiate the +z face of congruently melting undoped and MgO-doped LN single crystals followed by electric field poling [3]. In that initial report the potential of the method for both, ferroelectric domain engineering and micro-structuring, was demonstrated.

Item Type: Conference or Workshop Item (Paper)
Related URLs:
Subjects: Q Science
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 79000
Date Deposited: 18 Mar 2010
Last Modified: 27 Mar 2014 19:00
URI: http://eprints.soton.ac.uk/id/eprint/79000

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