Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS

Download

PDF Restricted to System admin Download (1901Kb) | Request a copy

Description/Abstract

Co-sputtering techniques are used to deposit amorphous Si/Ti (a-Si/Ti) composite materials at room temperature
with a view to enabling post-CMOS fabrication of MEMS/NEMS. Electrical and mechanical properties
of a-Si/Ti are characterised and analysed, benchmarking those of polycrystalline Si (poly-Si)
commonly used for MEMS/NEMS. The surface micromachining feasibility of a-Si/Ti is preliminarily investigated
using a commonly available Si dry etching process. The promising material and process development
suggests that a-Si/Ti composites can potentially be exploited as MEMS/NEMS structural materials
with desirable post-CMOS process compatibility, leading to monolithic integration of MEMS/NEMS and
ICs.