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Enhanced diffusion following point defect injection into B in SiGe and Si

Enhanced diffusion following point defect injection into B in SiGe and Si
Enhanced diffusion following point defect injection into B in SiGe and Si
boron, diffusion, diffusion mechanism, enhanced diffusion, point defect injection, silicon, silicon-germanium
1012-0386
717 -722
Willoughby, Arthur F.W.
c19c9168-766a-4d2e-943a-4cdebe60a6a6
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Dan, Aihua
9f7e06dc-a74f-4543-8419-70411b1d1406
McGregor, Barry M.
75e092df-9280-4468-a763-2a951eb5daae
Willoughby, Arthur F.W.
c19c9168-766a-4d2e-943a-4cdebe60a6a6
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Dan, Aihua
9f7e06dc-a74f-4543-8419-70411b1d1406
McGregor, Barry M.
75e092df-9280-4468-a763-2a951eb5daae

Willoughby, Arthur F.W., Bonar, Janet M., Dan, Aihua and McGregor, Barry M. (2001) Enhanced diffusion following point defect injection into B in SiGe and Si. Defect and Diffusion Forum, 194-199, 717 -722.

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More information

Published date: 2001
Keywords: boron, diffusion, diffusion mechanism, enhanced diffusion, point defect injection, silicon, silicon-germanium

Identifiers

Local EPrints ID: 21487
URI: http://eprints.soton.ac.uk/id/eprint/21487
ISSN: 1012-0386
PURE UUID: e9850e15-b6fb-4dcf-a9a0-fab3294e6959

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Date deposited: 13 Mar 2006
Last modified: 08 Jan 2022 06:46

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Contributors

Author: Arthur F.W. Willoughby
Author: Janet M. Bonar
Author: Aihua Dan
Author: Barry M. McGregor

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