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Diffusion of boron in germanium

Diffusion of boron in germanium
Diffusion of boron in germanium
Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy (SIMS) was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5 (±0.3) X 10-16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in SiGe alloys from low Ge leveIs to high Ge leveIs.
boron, germanium, diffusion, sims
19-20
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, Arthur F.W.
5176a13b-d691-4447-85a6-fdc681118819
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, Arthur F.W.
5176a13b-d691-4447-85a6-fdc681118819

Uppal, Suresh and Willoughby, Arthur F.W. (2001) Diffusion of boron in germanium. Proceedings of the Seventh Postgraduate Conference in Engineering Materials,, Southampton, UK. 30 Sep 2001. pp. 19-20 .

Record type: Conference or Workshop Item (Paper)

Abstract

Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy (SIMS) was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5 (±0.3) X 10-16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in SiGe alloys from low Ge leveIs to high Ge leveIs.

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More information

Published date: 2001
Venue - Dates: Proceedings of the Seventh Postgraduate Conference in Engineering Materials,, Southampton, UK, 2001-09-30 - 2001-09-30
Keywords: boron, germanium, diffusion, sims

Identifiers

Local EPrints ID: 21793
URI: http://eprints.soton.ac.uk/id/eprint/21793
PURE UUID: 20c3e3c5-c371-4482-aace-d616f91d5ed6

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Date deposited: 19 Mar 2007
Last modified: 11 Dec 2021 14:33

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Contributors

Author: Suresh Uppal
Author: Arthur F.W. Willoughby

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