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A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy

A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy
A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy
0-7803-4135-X
255-260
Schiz, J
d29b4f9e-f87d-445a-962b-db8de79f45a1
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Schiz, J
d29b4f9e-f87d-445a-962b-db8de79f45a1
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Schiz, J, Bonar, J M and Ashburn, P (1997) A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy. Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. pp. 255-260 .

Record type: Conference or Workshop Item (Other)

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More information

Published date: 1997
Venue - Dates: Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250924
URI: http://eprints.soton.ac.uk/id/eprint/250924
ISBN: 0-7803-4135-X
PURE UUID: 6f66b7aa-e924-4c96-8542-4406b523e11d

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Date deposited: 01 Oct 1999
Last modified: 08 Jan 2022 08:46

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Contributors

Author: J Schiz
Author: J M Bonar
Author: P Ashburn

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