Moiseiwitsch, N E and Ashburn, P (1994) Interfacial oxide break-up in npn polysilicon emitter bipolar transistors by fluorine implantation.
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250948
URI: http://eprints.soton.ac.uk/id/eprint/250948
PURE UUID: 2c85360c-6378-4199-95db-0dd4a5f801c5
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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