Ashburn, P, Nouailhat, A and Chantre, A (1994) Measurement of the bandgap narrowing in the base of Si homojunction and Si/SiGe heterojunction bipolar transistors from the temperature dependence of the collector current: Supplement C6.
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250949
URI: http://eprints.soton.ac.uk/id/eprint/250949
PURE UUID: bb41fc8e-4142-45e0-9aba-add86867d194
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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