Robbins, D J, Leong, W Y, Glasper, J L, Pidduck, A J, Jackson, R, Post, I R C, Shafi, Z A and Ashburn, P (1992) Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants.
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Published date: 1992
Additional Information:
Organisation: ESSDERC
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251037
URI: http://eprints.soton.ac.uk/id/eprint/251037
PURE UUID: 0d1075ad-5ac8-4e43-86f5-0cc0bbe6b343
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Date deposited: 11 Oct 1999
Last modified: 04 Jan 2024 04:23
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Contributors
Author:
D J Robbins
Author:
W Y Leong
Author:
J L Glasper
Author:
A J Pidduck
Author:
R Jackson
Author:
I R C Post
Author:
Z A Shafi
Author:
P Ashburn
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