Thick selective epitaxial growth of silicon at 960ºC using silane only

Afshar-Hanaii, N., Bonar, J.M., Evans, A.G.R., Parker, E.H.C., Starbuck, C.M.K. and Kemhadjian, H.A. (1992) Thick selective epitaxial growth of silicon at 960ºC using silane only. Microelectronic Engineering, 18 (3), 237-246. (doi:10.1016/S0167-9317(05)80004-8).

Abstract

Selective epitaxial layers of silicon have been successfully grown in a chlorine-free system. An optimum set of growth conditions has been found under which selective layers of up to 1 μm can be achieved. Excellent thickness uniformity (less than 5% standard deviation) across the wafer and from run to run has been achieved in windows as small as 1 μm, without any loading effect. In features with sidewalls aligned along the 〈100〉 direction, faceting is less pronounced as compared to features aligned along the 〈110〉 direction. The technology is promising for the fabrication of future ULSI devices, utilizing selective epitaxial growth of silicon.

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