Jorgensen, N, Barry, J C, Booker, G R, Ashburn, P, Wolstenholme, G R, Wilson, M C and Hunt, P C (1985) TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor.
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Published date: 1985
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251895
URI: http://eprints.soton.ac.uk/id/eprint/251895
PURE UUID: 8e4757c0-f5b9-426e-a724-e3262cd53408
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Date deposited: 16 Nov 1999
Last modified: 10 Dec 2021 20:23
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Contributors
Author:
N Jorgensen
Author:
J C Barry
Author:
G R Booker
Author:
P Ashburn
Author:
G R Wolstenholme
Author:
M C Wilson
Author:
P C Hunt
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