Model for Phosphorus diffusion in silicon during rapid thermal annealing
Model for Phosphorus diffusion in silicon during rapid thermal annealing
Nanu, L
83e56023-b0b1-4b4f-a87b-3bbe8058ecc8
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
December 1988
Nanu, L
83e56023-b0b1-4b4f-a87b-3bbe8058ecc8
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Nanu, L and Evans, A G R
(1988)
Model for Phosphorus diffusion in silicon during rapid thermal annealing.
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Published date: December 1988
Additional Information:
Address: Nottingham
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252066
URI: http://eprints.soton.ac.uk/id/eprint/252066
PURE UUID: f8514eaa-8a58-459b-9bbd-ed716cfc56e6
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Date deposited: 09 Dec 1999
Last modified: 10 Dec 2021 20:24
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Contributors
Author:
L Nanu
Author:
A G R Evans
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