Polysilicon Microstructures
Polysilicon Microstructures
The sacrificial etch technology for fabricating free-standing three-dimensional microstructures in polysilicon has been successfully implemented. A variety of techniques for reducing the intrinsic compressive stress have been employed in fabricating low stress structures. Low-temperature-deposited microcrystalline polysilicon and polysilicon deposited over doped oxide were found to have low intrinsic stress, without additional annealing. A simple technique for obtaining additional compliance in diaphragms is described. Anisotropically etched submicron fibers and plastically deformed polysilicon shells are some of the unusual devices that have been obtained
Farooqui, M M
1c0f9c64-a0a1-4759-a5de-492f142547ae
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
1991
Farooqui, M M
1c0f9c64-a0a1-4759-a5de-492f142547ae
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Farooqui, M M and Evans, A G R
(1991)
Polysilicon Microstructures.
In Proceedings of the IEEE Micro Electro Mechanical Systems: An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots.
IEEE..
(doi:10.1109/MEMSYS.1991.114793).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The sacrificial etch technology for fabricating free-standing three-dimensional microstructures in polysilicon has been successfully implemented. A variety of techniques for reducing the intrinsic compressive stress have been employed in fabricating low stress structures. Low-temperature-deposited microcrystalline polysilicon and polysilicon deposited over doped oxide were found to have low intrinsic stress, without additional annealing. A simple technique for obtaining additional compliance in diaphragms is described. Anisotropically etched submicron fibers and plastically deformed polysilicon shells are some of the unusual devices that have been obtained
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Published date: 1991
Additional Information:
Address: Nara, Japan
Venue - Dates:
IEEE Micro Electro Mechanical Systems, , Nara, Japan, 1991-01-30 - 1991-02-02
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252076
URI: http://eprints.soton.ac.uk/id/eprint/252076
PURE UUID: 395c2adb-5a89-4d8a-94f0-d63e7f70c1b5
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Date deposited: 09 Dec 1999
Last modified: 16 Mar 2024 04:30
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Author:
M M Farooqui
Author:
A G R Evans
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