Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation
Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation
Wu, Z Y
79ca95d2-724c-4b77-9784-2a4b2ec54fd0
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
May 1997
Wu, Z Y
79ca95d2-724c-4b77-9784-2a4b2ec54fd0
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Wu, Z Y, Hall, S, Bonar, J M and Parker, G J
(1997)
Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation.
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Published date: May 1997
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252491
URI: http://eprints.soton.ac.uk/id/eprint/252491
PURE UUID: 2fe0b20a-6415-4df8-88f5-2e8e74750ace
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Date deposited: 31 Jan 2000
Last modified: 08 Jan 2022 17:36
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Contributors
Author:
Z Y Wu
Author:
S Hall
Author:
J M Bonar
Author:
G J Parker
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