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Study of the effect of boron doping on the aging of micromachined silicon cantilevers

Study of the effect of boron doping on the aging of micromachined silicon cantilevers
Study of the effect of boron doping on the aging of micromachined silicon cantilevers
Micromachined silicon cantilevers have been prepared using anisotropic etching in conjunction with boron doping. They were driven into resonant vibration for periods of over 2000 h and their natural frequencies and quality factors were recorded as a function of aging time. It has been found that aging has occurred in all of the samples tested and this was manifest as an increase in the quality factor and a small decrease in resonant frequency, with both values eventually stabilizing. The magnitude of this effect was found to increase with increasing levels of boron doping within the structures. The mechanism of aging is not clear but may be linked to dislocation damage and activity of interstitial boron with the crystals.
0003-6951
577-579
Pember, Andrew
9905c7b7-ae71-4710-aa23-f6dbaebc42e9
Smith, Jim
e6dd8bc8-de64-4d4e-8856-0b4f8587f122
Kemhadjian, Henri
290aa39e-1ff6-4757-ac86-b4353104116e
Pember, Andrew
9905c7b7-ae71-4710-aa23-f6dbaebc42e9
Smith, Jim
e6dd8bc8-de64-4d4e-8856-0b4f8587f122
Kemhadjian, Henri
290aa39e-1ff6-4757-ac86-b4353104116e

Pember, Andrew, Smith, Jim and Kemhadjian, Henri (1995) Study of the effect of boron doping on the aging of micromachined silicon cantilevers. Applied Physics Letters, 66, 577-579. (doi:10.1063/1.114018).

Record type: Article

Abstract

Micromachined silicon cantilevers have been prepared using anisotropic etching in conjunction with boron doping. They were driven into resonant vibration for periods of over 2000 h and their natural frequencies and quality factors were recorded as a function of aging time. It has been found that aging has occurred in all of the samples tested and this was manifest as an increase in the quality factor and a small decrease in resonant frequency, with both values eventually stabilizing. The magnitude of this effect was found to increase with increasing levels of boron doping within the structures. The mechanism of aging is not clear but may be linked to dislocation damage and activity of interstitial boron with the crystals.

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More information

Accepted/In Press date: 5 December 1994
Published date: 30 January 1995
Additional Information: A correction has been attached to this output located at https://pubs.aip.org/aip/apl/article/66/21/2914/64490/Erratum-Study-of-the-effect-of-boron-doping-on-the and https://doi.org/10.1063/1.114226
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252778
URI: http://eprints.soton.ac.uk/id/eprint/252778
ISSN: 0003-6951
PURE UUID: 9e163e43-fa1a-4332-926b-e38e249da696

Catalogue record

Date deposited: 20 Mar 2000
Last modified: 17 Mar 2024 06:02

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Contributors

Author: Andrew Pember
Author: Jim Smith
Author: Henri Kemhadjian

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