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Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons

Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons
Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons
We extend our previous studies of the heating by DC electric fields of submicron-diameter free-standing wires of doped GaAs at low lattice temperatures. For lower fields, equivalent to sub-nanowatt dissipated power in our samples, all thermal processes could be accounted for in terms of electron heating alone. We consider here the regime where the hot electrons deposit some of their excess energy into the host lattice, we extract a characteristic electron-phonon scattering length that is an appreciable fraction of the sample length, and we provide evidence for ballistic transport.
0268-1242
B231-B234
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Kelly, M J
6266062d-5df8-4523-aaea-4412f5914fc2
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
Ritchie, D A
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Frost, J E F
d55aea1c-30a8-4359-93fc-cca2b1ca4c8d
Jones, G A C
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Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Kelly, M J
6266062d-5df8-4523-aaea-4412f5914fc2
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
Ritchie, D A
0d6e3fed-1a77-4057-972f-0422d9199a4a
Frost, J E F
d55aea1c-30a8-4359-93fc-cca2b1ca4c8d
Jones, G A C
0f491a1c-d85f-4c50-8b34-321196b9d946

Potts, A, Kelly, M J, Hasko, D G, Cleaver, J R A, Ahmed, H, Ritchie, D A, Frost, J E F and Jones, G A C (1992) Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons. Semiconductor Science and Technology, 7 (3B), B231-B234.

Record type: Article

Abstract

We extend our previous studies of the heating by DC electric fields of submicron-diameter free-standing wires of doped GaAs at low lattice temperatures. For lower fields, equivalent to sub-nanowatt dissipated power in our samples, all thermal processes could be accounted for in terms of electron heating alone. We consider here the regime where the hot electrons deposit some of their excess energy into the host lattice, we extract a characteristic electron-phonon scattering length that is an appreciable fraction of the sample length, and we provide evidence for ballistic transport.

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More information

Published date: 1992
Additional Information: Paper presented at the 7th International Conference on Hot Carriers in Semiconductors, Nara, Japan (July 01-05 1991)
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252888
URI: http://eprints.soton.ac.uk/id/eprint/252888
ISSN: 0268-1242
PURE UUID: bcf65d1d-ddbb-4a07-8289-a2d3c9600d5f

Catalogue record

Date deposited: 23 Mar 2006
Last modified: 10 Dec 2021 20:30

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Contributors

Author: A Potts
Author: M J Kelly
Author: D G Hasko
Author: J R A Cleaver
Author: H Ahmed
Author: D A Ritchie
Author: J E F Frost
Author: G A C Jones

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