SiGe heterojunction bipolar transistors on insulator
SiGe heterojunction bipolar transistors on insulator
This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on SiGe heterojunction bipolar transistors on SOI at Southampton University is reviewed.
1-56677-309-1
433-444
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mubarek, H.A.W.El
1751dd7c-cec8-451e-9134-4e310f9eb520
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
March 2001
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mubarek, H.A.W.El
1751dd7c-cec8-451e-9134-4e310f9eb520
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Ashburn, P., Mubarek, H.A.W.El, Bonar, J.M. and Redman-White, W.
(2001)
SiGe heterojunction bipolar transistors on insulator.
Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, Washington, United States.
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Conference or Workshop Item
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Abstract
This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on SiGe heterojunction bipolar transistors on SOI at Southampton University is reviewed.
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Published date: March 2001
Additional Information:
Event Dates: March 2001 Organisation: Electrochemical Society
Venue - Dates:
Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, Washington, United States, 2001-03-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 254722
URI: http://eprints.soton.ac.uk/id/eprint/254722
ISBN: 1-56677-309-1
PURE UUID: 0944782a-8905-4310-99e4-e03c5e6002d6
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Date deposited: 05 Jan 2004
Last modified: 10 Dec 2021 20:38
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Contributors
Author:
H.A.W.El Mubarek
Author:
J.M. Bonar
Author:
W. Redman-White
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