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Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation

Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation
Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation
El Mubarek, H.A.W.
c4bc6a15-b00e-4b72-84e0-611d3d20fead
Bonar, J.M.
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
El Mubarek, H.A.W.
c4bc6a15-b00e-4b72-84e0-611d3d20fead
Bonar, J.M.
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

El Mubarek, H.A.W., Bonar, J.M. and Ashburn, P. (2004) Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation. Technology and Device Meeting 2004, , Frankfurt, Germany. 15 - 18 May 2004.

Record type: Conference or Workshop Item (Paper)

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More information

Published date: May 2004
Venue - Dates: Technology and Device Meeting 2004, , Frankfurt, Germany, 2004-05-15 - 2004-05-18
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260756
URI: http://eprints.soton.ac.uk/id/eprint/260756
PURE UUID: 01deb10d-7b00-43e5-96fc-cf1bd4588b00

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Date deposited: 14 Apr 2005
Last modified: 12 Dec 2021 01:57

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Contributors

Author: H.A.W. El Mubarek
Author: J.M. Bonar
Author: P. Ashburn

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