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Comparison between bulk micromachined and CMOS X-ray detectors

Comparison between bulk micromachined and CMOS X-ray detectors
Comparison between bulk micromachined and CMOS X-ray detectors
This paper compares two X-ray detectors fabricated using two different technologies: one is based on a bulk micromachined silicon photodetector and the other is based on a standard CMOS photodetector. The working principle of the two detectors is similar: a scintillating layer of CsI:TI is placed above the photodetector, so the X-rays are first converted into visible light (560 nm) which is then converted into an electrical signal by the photodetector. The different aspects of the fabrication and the experimental results of both X-ray detectors are presented and discussed.
X-rays, scintillator, micromachining
0924-4247
215-220
Rocha, J.G.
5868380a-d65c-417c-b2df-f8af3ca70adb
Schabmueller, C.G.J.
aed55c14-478b-47e7-b94c-6c8a6b673773
Ramos, N.F.
28229129-933d-4f4a-8c71-6fe41be51e64
Lanceros-Mendez, S.
a868b7d8-25d4-438e-a0e2-1149a2513cd4
Moreira, M.V.
cdc1d15d-245a-4aa8-9747-1d4c8feb563e
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Wolffenbuttel, R.F.
0b79829a-9689-40f6-9401-57c167973fe0
Correia, J.H.
39eaa9fc-3e94-4422-8441-14657bede870
Rocha, J.G.
5868380a-d65c-417c-b2df-f8af3ca70adb
Schabmueller, C.G.J.
aed55c14-478b-47e7-b94c-6c8a6b673773
Ramos, N.F.
28229129-933d-4f4a-8c71-6fe41be51e64
Lanceros-Mendez, S.
a868b7d8-25d4-438e-a0e2-1149a2513cd4
Moreira, M.V.
cdc1d15d-245a-4aa8-9747-1d4c8feb563e
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Wolffenbuttel, R.F.
0b79829a-9689-40f6-9401-57c167973fe0
Correia, J.H.
39eaa9fc-3e94-4422-8441-14657bede870

Rocha, J.G., Schabmueller, C.G.J., Ramos, N.F., Lanceros-Mendez, S., Moreira, M.V., Evans, A.G.R., Wolffenbuttel, R.F. and Correia, J.H. (2004) Comparison between bulk micromachined and CMOS X-ray detectors. Sensors and Actuators A: Physical, 115 (2-3), 215-220.

Record type: Article

Abstract

This paper compares two X-ray detectors fabricated using two different technologies: one is based on a bulk micromachined silicon photodetector and the other is based on a standard CMOS photodetector. The working principle of the two detectors is similar: a scintillating layer of CsI:TI is placed above the photodetector, so the X-rays are first converted into visible light (560 nm) which is then converted into an electrical signal by the photodetector. The different aspects of the fabrication and the experimental results of both X-ray detectors are presented and discussed.

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More information

Published date: September 2004
Keywords: X-rays, scintillator, micromachining
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260882
URI: http://eprints.soton.ac.uk/id/eprint/260882
ISSN: 0924-4247
PURE UUID: cfd41a95-be27-403a-8512-81ed10471d66

Catalogue record

Date deposited: 17 May 2005
Last modified: 08 Jan 2022 08:50

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Contributors

Author: J.G. Rocha
Author: C.G.J. Schabmueller
Author: N.F. Ramos
Author: S. Lanceros-Mendez
Author: M.V. Moreira
Author: A.G.R. Evans
Author: R.F. Wolffenbuttel
Author: J.H. Correia

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