Nanba, M, Uchino, T, Kondo, M, Nakamura, T, Kobayashi, T, Tamaki, Y and Tanabe, M (1993) A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts. IEEE Trans. Electron Devices, 40, 1563.
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Published date: 1993
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262157
URI: http://eprints.soton.ac.uk/id/eprint/262157
PURE UUID: 54c7dfa4-9ca9-444c-a85a-9a1240ca4f92
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Date deposited: 27 Mar 2006
Last modified: 10 Dec 2021 21:25
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Contributors
Author:
M Nanba
Author:
T Uchino
Author:
M Kondo
Author:
T Nakamura
Author:
T Kobayashi
Author:
Y Tamaki
Author:
M Tanabe
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