Nanba, M, Kobayashi, T, Uchino, T, Nakamura, T, Kondo, M, Tamaki, Y, Iijima, S, Kure, T and Tanabe, M (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology. IEDM Tech. Digest, 443.
Record type:
Article
This record has no associated files available for download.
More information
Published date: 1991
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262171
URI: http://eprints.soton.ac.uk/id/eprint/262171
PURE UUID: 4300410a-cf94-4e3e-97e7-e8127a302ff9
Catalogue record
Date deposited: 27 Mar 2006
Last modified: 10 Dec 2021 21:25
Export record
Contributors
Author:
M Nanba
Author:
T Kobayashi
Author:
T Uchino
Author:
T Nakamura
Author:
M Kondo
Author:
Y Tamaki
Author:
S Iijima
Author:
T Kure
Author:
M Tanabe
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.