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Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel

Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel
Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel
212-218
Walker, P.
714abe6b-604c-4239-93fd-20cfd2b4de1e
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Uno, S.
ad5d0b8f-4180-46db-b7e8-4d38c4d0bc61
Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Hasko, D.
047e6fac-42ad-415d-a3e4-d93497c646de
Walker, P.
714abe6b-604c-4239-93fd-20cfd2b4de1e
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Uno, S.
ad5d0b8f-4180-46db-b7e8-4d38c4d0bc61
Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Hasko, D.
047e6fac-42ad-415d-a3e4-d93497c646de

Walker, P., Mizuta, Hiroshi, Uno, S., Furuta, Y. and Hasko, D. (2004) Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel. IEEE Transactions on Electron Devices, ED-54, 212-218.

Record type: Article
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Published date: 2004
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266204
URI: http://eprints.soton.ac.uk/id/eprint/266204
PURE UUID: 81d2adf8-9509-43a2-a588-bee60fdb59b8

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Date deposited: 22 Jul 2008 08:20
Last modified: 14 Mar 2024 08:22

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Contributors

Author: P. Walker
Author: Hiroshi Mizuta
Author: S. Uno
Author: Y. Furuta
Author: D. Hasko

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