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The electron mobility transition in n-GaAs heavily doped channel

The electron mobility transition in n-GaAs heavily doped channel
The electron mobility transition in n-GaAs heavily doped channel
0268-1242
811-814
Ohkura, Y.
f9ce69cd-20b3-41e7-a3da-56a0ce0ce4fd
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Ohbu, I.
9b897ac6-3fd6-454b-9665-64cab7466581
Kagaya, O.
f148d3a3-fc64-4940-96ee-c61b432eddae
Katayama, K.
1fbb45dd-00f3-49bc-adf6-cd9c74014741
Ihara, S.
ec7a79bd-c423-4123-a368-65e1a1d84c34
Ohkura, Y.
f9ce69cd-20b3-41e7-a3da-56a0ce0ce4fd
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Ohbu, I.
9b897ac6-3fd6-454b-9665-64cab7466581
Kagaya, O.
f148d3a3-fc64-4940-96ee-c61b432eddae
Katayama, K.
1fbb45dd-00f3-49bc-adf6-cd9c74014741
Ihara, S.
ec7a79bd-c423-4123-a368-65e1a1d84c34

Ohkura, Y., Mizuta, Hiroshi, Ohbu, I., Kagaya, O., Katayama, K. and Ihara, S. (1994) The electron mobility transition in n-GaAs heavily doped channel. Semiconductor Science and Technology, 9, 811-814.

Record type: Article
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Published date: 1994
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266238
URI: http://eprints.soton.ac.uk/id/eprint/266238
ISSN: 0268-1242
PURE UUID: 84e86bc6-c4ec-45dc-a7bb-78592686c7fc

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Date deposited: 22 Jul 2008 10:15
Last modified: 14 Mar 2024 08:23

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Contributors

Author: Y. Ohkura
Author: Hiroshi Mizuta
Author: I. Ohbu
Author: O. Kagaya
Author: K. Katayama
Author: S. Ihara

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