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Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors

Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors
Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors
0021-4922
L1650-L1653
Kusano, C.
e6d696ce-bb30-4dc3-b99a-5df01c5f73ad
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Mochizuki, K.
4cbcdc88-b8b0-431e-a5d7-2dc1b27c392f
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Kusano, C.
e6d696ce-bb30-4dc3-b99a-5df01c5f73ad
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Mochizuki, K.
4cbcdc88-b8b0-431e-a5d7-2dc1b27c392f
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d

Kusano, C., Mizuta, Hiroshi, Mochizuki, K. and Yamaguchi, K. (1992) Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors. Japanese Journal of Applied Physics, 31, L1650-L1653.

Record type: Article
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Published date: 1992
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266243
URI: http://eprints.soton.ac.uk/id/eprint/266243
ISSN: 0021-4922
PURE UUID: 80ae3c52-7ccc-4754-8762-bac72b061bdc

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Date deposited: 22 Jul 2008 10:33
Last modified: 14 Mar 2024 08:23

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Contributors

Author: C. Kusano
Author: Hiroshi Mizuta
Author: K. Mochizuki
Author: K. Yamaguchi

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