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Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates

Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
0039-6028
363-368
Goodings, C.J.
e59e5a35-2189-4b27-b3f2-2096084b585f
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Cleaver, J.R.A.
19303891-8463-4930-a5b7-bf04ca5a471c
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Goodings, C.J.
e59e5a35-2189-4b27-b3f2-2096084b585f
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Cleaver, J.R.A.
19303891-8463-4930-a5b7-bf04ca5a471c
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf

Goodings, C.J., Mizuta, Hiroshi, Cleaver, J.R.A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science, 305, 363-368.

Record type: Article
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Published date: 1994
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266255
URI: http://eprints.soton.ac.uk/id/eprint/266255
ISSN: 0039-6028
PURE UUID: cd95fa51-0ba1-4dbf-97e4-dd6fa4429552

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Date deposited: 22 Jul 2008 14:47
Last modified: 14 Mar 2024 08:24

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Contributors

Author: C.J. Goodings
Author: Hiroshi Mizuta
Author: J.R.A. Cleaver
Author: H. Ahmed

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