Design and Analysis of an In-Plane Resonant Nano-Electro-Mechanical Sensor for Sub-Attogram-Level Molecular Mass-Detection

Hassani, F.A, Cobianu, C, Armini, S, Petrescu, V, Merken, P, Tsamados, D, Ionescu, A.M, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Design and Analysis of an In-Plane Resonant Nano-Electro-Mechanical Sensor for Sub-Attogram-Level Molecular Mass-Detection. 41st International Conference on Solid State Devices and Materials (SSDM2009), Sendai.

Abstract

This paper presents the In-Plane Resonant NEM (IP R-NEM) sensor based on the mass-detection principle. The proposed sensor features a mass-detection limit of sub atto gram and the sensitivity of the order of zepto gram/Hz, more than eight orders smaller than that of recent QCM-based sensors. The sensor is designed and analyzed using the three-dimensional FEM simulation. Self-assembled linker molecules and adsorbed target molecules on the beam surface are modelled by adding an extra surface coating layer. We study two different surface detection schemes, top-and-bottom and all-around surface detection. The IP R-NEM sensor is integrated with a MOSFET for electrical detection, and the transient response is studied on the system-level using a hybrid electro-mechanical circuit simulation.

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