Control of inter-dot electrostatic coupling in an asymmetric silicon double quantum dot operating at 4.5 K
Control of inter-dot electrostatic coupling in an asymmetric silicon double quantum dot operating at 4.5 K
We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.
095002-1-095002-4
Yamahata, G.
ea3ea646-33fb-4168-9216-1b7bea9ed402
Kodera, T.
031bab57-3623-4483-ab28-b51acfe1c4c8
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Uchida, K.
f1302152-c8a5-4d5e-9df6-6a6f1f3d8463
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
21 August 2009
Yamahata, G.
ea3ea646-33fb-4168-9216-1b7bea9ed402
Kodera, T.
031bab57-3623-4483-ab28-b51acfe1c4c8
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Uchida, K.
f1302152-c8a5-4d5e-9df6-6a6f1f3d8463
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Yamahata, G., Kodera, T., Mizuta, H., Uchida, K. and Oda, S.
(2009)
Control of inter-dot electrostatic coupling in an asymmetric silicon double quantum dot operating at 4.5 K.
Applied Physics Express, 2 (9), .
(doi:10.1143/APEX.2.095002).
Abstract
We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.
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Published date: 21 August 2009
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 267802
URI: http://eprints.soton.ac.uk/id/eprint/267802
PURE UUID: 6f41b5d9-287c-4e74-be8f-a9359886c40b
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Date deposited: 26 Aug 2009 00:42
Last modified: 14 Mar 2024 08:59
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Author:
G. Yamahata
Author:
T. Kodera
Author:
H. Mizuta
Author:
K. Uchida
Author:
S. Oda
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