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Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure

Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure
Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure
Electron transport in the surface oxidized Si nanocrystals ensembles is described based on electrical measurements of thin film transistor structures as functions of temperature and voltage. Contact resistance has been greatly reduced by using a heavily doped silicon-on-insulator layer as electrodes, compared with devices based on Al/SiNCs/Al structures. Traps with the activation energy of 147 and 103 meV have been found when SiNC channels are applied with high gate voltage. The mechanism that these two traps successively dominate the Poole-Frenkel type conduction in low and high drain-source voltage region is discussed based on an assumption that the density of these two traps is different. Trapped carriers' effects on the electric field distribution are believed to be responsible for the difference of the G-Vds½ Slopes in the different drain-sources regions, which is in accord with the experimental results of the hydrogen annealing treatment. The carrier mobility is also discussed based on the measurement of gate voltage dependence of the drain-source current.
Zhou, X
4ef9e49f-f25d-4b39-b1d5-ea5a49d5ad64
Uchida, K
94591838-45bd-426b-91da-f9d60a055c6c
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Zhou, X
4ef9e49f-f25d-4b39-b1d5-ea5a49d5ad64
Uchida, K
94591838-45bd-426b-91da-f9d60a055c6c
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Zhou, X, Uchida, K, Mizuta, H and Oda, S (2009) Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure. Journal of Applied Physics, 106, [044511]. (doi:10.1063/1.3204669).

Record type: Article

Abstract

Electron transport in the surface oxidized Si nanocrystals ensembles is described based on electrical measurements of thin film transistor structures as functions of temperature and voltage. Contact resistance has been greatly reduced by using a heavily doped silicon-on-insulator layer as electrodes, compared with devices based on Al/SiNCs/Al structures. Traps with the activation energy of 147 and 103 meV have been found when SiNC channels are applied with high gate voltage. The mechanism that these two traps successively dominate the Poole-Frenkel type conduction in low and high drain-source voltage region is discussed based on an assumption that the density of these two traps is different. Trapped carriers' effects on the electric field distribution are believed to be responsible for the difference of the G-Vds½ Slopes in the different drain-sources regions, which is in accord with the experimental results of the hydrogen annealing treatment. The carrier mobility is also discussed based on the measurement of gate voltage dependence of the drain-source current.

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Published date: 2009
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 270239
URI: http://eprints.soton.ac.uk/id/eprint/270239
PURE UUID: d42a14d0-6057-43d2-95ef-e1e3bdafb607

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Date deposited: 21 Apr 2010 07:46
Last modified: 14 Mar 2024 09:16

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Contributors

Author: X Zhou
Author: K Uchida
Author: H Mizuta
Author: S Oda

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