High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.
21986-21991
Gardes, F.Y.
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Brimont, A.
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Sanchis, P.
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Rasigade, G.
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Marris-Morini, D.
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O'Faolain, L.
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Dong, F.
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Fedeli, J.M.
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Dumon, P.
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Vivien, L.
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Krauss, T.F.
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Reed, G.T.
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Martí, J.
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23 November 2009
Gardes, F.Y.
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Brimont, A.
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Sanchis, P.
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Rasigade, G.
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Marris-Morini, D.
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O'Faolain, L.
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Dong, F.
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Fedeli, J.M.
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Dumon, P.
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Vivien, L.
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Krauss, T.F.
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Reed, G.T.
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Martí, J.
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Gardes, F.Y., Brimont, A., Sanchis, P., Rasigade, G., Marris-Morini, D., O'Faolain, L., Dong, F., Fedeli, J.M., Dumon, P., Vivien, L., Krauss, T.F., Reed, G.T. and Martí, J.
(2009)
High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode.
Optics Express, 17 (24), .
(doi:10.1364/OE.17.021986).
Abstract
High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.
Text
oe-17-24-21986
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More information
Published date: 23 November 2009
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 337961
URI: http://eprints.soton.ac.uk/id/eprint/337961
ISSN: 1094-4087
PURE UUID: 09c1f38f-4635-4d5b-9f48-bdfbbc71ae6e
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Date deposited: 08 May 2012 13:21
Last modified: 15 Mar 2024 03:40
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Contributors
Author:
A. Brimont
Author:
P. Sanchis
Author:
G. Rasigade
Author:
D. Marris-Morini
Author:
L. O'Faolain
Author:
F. Dong
Author:
J.M. Fedeli
Author:
P. Dumon
Author:
L. Vivien
Author:
T.F. Krauss
Author:
J. Martí
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