Electrically driven 8-14 micron band solid-state modulator
Electrically driven 8-14 micron band solid-state modulator
Simulation results for an electrically driven 8-14µm band, solid-state modulator based on a high purity germanium p-i-n diode are presented. Known carrier recombination mechanisms detrimental to device performance along with ways to reduce their effect are detailed.
Device simulations using 'ATLAS', indicate that modulation depths of up to 99.5% attenuation for incident infrared radiation centred at 10.6µm can be achieved by using ion-implanted device construction and optimisation of the design parameters. Preliminary transient analysis attained higher modulation frequency when transient large bias voltage (2V) is used momentarily during switching.
infrared, solid-state modulator, high purity germanium, p-i-n diode
5pp
Lee, C.Y.
53db23d1-7f93-467c-8e8d-18e80f5af926
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Lee, C.Y.
53db23d1-7f93-467c-8e8d-18e80f5af926
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Lee, C.Y. and Rutt, H.N.
(2006)
Electrically driven 8-14 micron band solid-state modulator.
EMRS-DTC Technical Conference 2006: Electro Magnetic Remote Sensing Defence Technology Centre 2006 Conference, Edinburgh, UK.
13 - 14 Jul 2006.
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Simulation results for an electrically driven 8-14µm band, solid-state modulator based on a high purity germanium p-i-n diode are presented. Known carrier recombination mechanisms detrimental to device performance along with ways to reduce their effect are detailed.
Device simulations using 'ATLAS', indicate that modulation depths of up to 99.5% attenuation for incident infrared radiation centred at 10.6µm can be achieved by using ion-implanted device construction and optimisation of the design parameters. Preliminary transient analysis attained higher modulation frequency when transient large bias voltage (2V) is used momentarily during switching.
Text
3352.pdf
- Accepted Manuscript
More information
e-pub ahead of print date: 2006
Venue - Dates:
EMRS-DTC Technical Conference 2006: Electro Magnetic Remote Sensing Defence Technology Centre 2006 Conference, Edinburgh, UK, 2006-07-13 - 2006-07-14
Keywords:
infrared, solid-state modulator, high purity germanium, p-i-n diode
Identifiers
Local EPrints ID: 38429
URI: http://eprints.soton.ac.uk/id/eprint/38429
PURE UUID: ee6cbe9c-25cc-465c-9905-e058bc1a3897
Catalogue record
Date deposited: 22 Jun 2006
Last modified: 15 Mar 2024 08:07
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Contributors
Author:
C.Y. Lee
Author:
H.N. Rutt
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