A Review of silicon carbide development in MEMS applications
A Review of silicon carbide development in MEMS applications
Due to its desirable material properties, Silicon Carbide (SiC) has
become an alternative material to replace Si for Microelectromechanical
Systems (MEMS) applications in harsh environments. To promote SiC MEMS
development towards future cost-effective products, main technology areas in
material deposition and processes have attracted significant interest. The
developments in these areas have contributed to the rapid emergence of SiC
MEMS prototypes. In this paper, we give an overview of the important
developments in SiC material formation and fabrication processes in recent
years. Some of the most interesting state-of-the-art SiC MEMS devices are
reviewed. This highlights the major progresses in SiC MEMS developed thus
far. This paper also looks into the prospect of SiC MEMS drawing attention to
potential issues.
225-240
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
2009
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Jiang, Liudi and Cheung, R.
(2009)
A Review of silicon carbide development in MEMS applications.
International Journal of Nanomanufacturing, 2 (3/4), .
Abstract
Due to its desirable material properties, Silicon Carbide (SiC) has
become an alternative material to replace Si for Microelectromechanical
Systems (MEMS) applications in harsh environments. To promote SiC MEMS
development towards future cost-effective products, main technology areas in
material deposition and processes have attracted significant interest. The
developments in these areas have contributed to the rapid emergence of SiC
MEMS prototypes. In this paper, we give an overview of the important
developments in SiC material formation and fabrication processes in recent
years. Some of the most interesting state-of-the-art SiC MEMS devices are
reviewed. This highlights the major progresses in SiC MEMS developed thus
far. This paper also looks into the prospect of SiC MEMS drawing attention to
potential issues.
Text
IJNM_review_1st_2009.pdf
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Published date: 2009
Additional Information:
Invited review
Organisations:
Engineering Mats & Surface Engineerg Gp
Identifiers
Local EPrints ID: 63549
URI: http://eprints.soton.ac.uk/id/eprint/63549
ISSN: 1746-9392
PURE UUID: 8c864077-1d22-47d7-be60-a28d47e622de
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Date deposited: 15 Oct 2008
Last modified: 16 Mar 2024 03:47
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Author:
R. Cheung
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