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High-pressure photoluminescence study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy

High-pressure photoluminescence study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy
High-pressure photoluminescence study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy
Photoluminescence (PL) measurements on Ga0.5In0.5P grown by organometallic vapor phase epitaxy on GaAs substrates at various growth temperatures have been made as a function of pressure up to about 4.5 GPa. In the pressure range 0-3.8 GPa the PL spectrum exhibits a shift to higher energies. It is found that the pressure coefficient of the PL peak energy depends significantly on the growth temperature and hence on the degree of ordering. These results are partly explained in terms of repulsion between the Gamma-folded energy states in the CuPt-type ordered structure.
0003-6951
1289-1291
Kobayashi, T.
de0e4553-c6dc-4570-9544-fd8cd05736d9
Deol, R.S.
804c55d3-704c-4752-b620-0d86b45871dd
Kobayashi, T.
de0e4553-c6dc-4570-9544-fd8cd05736d9
Deol, R.S.
804c55d3-704c-4752-b620-0d86b45871dd

Kobayashi, T. and Deol, R.S. (1991) High-pressure photoluminescence study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy. Applied Physics Letters, 58 (12), 1289-1291. (doi:10.1063/1.105212).

Record type: Article

Abstract

Photoluminescence (PL) measurements on Ga0.5In0.5P grown by organometallic vapor phase epitaxy on GaAs substrates at various growth temperatures have been made as a function of pressure up to about 4.5 GPa. In the pressure range 0-3.8 GPa the PL spectrum exhibits a shift to higher energies. It is found that the pressure coefficient of the PL peak energy depends significantly on the growth temperature and hence on the degree of ordering. These results are partly explained in terms of repulsion between the Gamma-folded energy states in the CuPt-type ordered structure.

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Published date: 25 March 1991
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Identifiers

Local EPrints ID: 78369
URI: http://eprints.soton.ac.uk/id/eprint/78369
DOI: doi:10.1063/1.105212
ISSN: 0003-6951
PURE UUID: 20b6a6ea-7491-407c-839b-995bcf652e79

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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 00:12

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Author: T. Kobayashi
Author: R.S. Deol

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