Kinetic analysis of the new sensitization effect in the TL of silica optical fibres
Kinetic analysis of the new sensitization effect in the TL of silica optical fibres
The kinetic parameters of the thermoluminescence induced by X-irradiation in Ge-silica optical fibres doped with Nd, are investigated. Initially the emission spectrum consists mainly of a band near 400 nm. The combined effect, of irradiation and heating generates a new band, near 520 nm. The kinetic analysis shows that besides the broad distribution of activation energies which is typical of the amorphous silica, several monoenergetic traps are active as well. The shallower trap can be linked to the well known "110 °C peak" of quartz. It is suggested that the recombination of electrons with O2' hole centres produce the 400 nm emission while the 520 nm hand is associated with a Nd3+ hole centre. Ge4+ is assumed to be the dominant electron trap.
739-747
Kirsh, Y.
2048b24d-b4d9-4c3f-90b5-f1517f78c98d
Townsend, J.E.
a5a6f6ef-adb0-4072-8dcb-b6f5b5a47e64
Townsend, P.D.
d09c7d3f-d83e-43cd-8ac4-546701bb860f
16 August 1989
Kirsh, Y.
2048b24d-b4d9-4c3f-90b5-f1517f78c98d
Townsend, J.E.
a5a6f6ef-adb0-4072-8dcb-b6f5b5a47e64
Townsend, P.D.
d09c7d3f-d83e-43cd-8ac4-546701bb860f
Kirsh, Y., Townsend, J.E. and Townsend, P.D.
(1989)
Kinetic analysis of the new sensitization effect in the TL of silica optical fibres.
Physica Status Solidi (A), 114 (2), .
(doi:10.1002/pssa.2211140238).
Abstract
The kinetic parameters of the thermoluminescence induced by X-irradiation in Ge-silica optical fibres doped with Nd, are investigated. Initially the emission spectrum consists mainly of a band near 400 nm. The combined effect, of irradiation and heating generates a new band, near 520 nm. The kinetic analysis shows that besides the broad distribution of activation energies which is typical of the amorphous silica, several monoenergetic traps are active as well. The shallower trap can be linked to the well known "110 °C peak" of quartz. It is suggested that the recombination of electrons with O2' hole centres produce the 400 nm emission while the 520 nm hand is associated with a Nd3+ hole centre. Ge4+ is assumed to be the dominant electron trap.
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Published date: 16 August 1989
Identifiers
Local EPrints ID: 78428
URI: http://eprints.soton.ac.uk/id/eprint/78428
ISSN: 1862-6300
PURE UUID: 1f1e2d32-754d-4e85-aa96-3feef7066c12
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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 00:14
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Author:
Y. Kirsh
Author:
J.E. Townsend
Author:
P.D. Townsend
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