Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1985

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Number of items: 17.

Article

Kotani, A., Mizuta, Hiroshi, Jo, T. and Parlebas, J. C. (1985) Theory of core photoemission spectra in CeO2. Solid State Communications, 53, 805-810.

Mizuta, Hiroshi and Kotani, A. (1985) Theory of spin-polarized Auger electrons from ferromagnetic materials. Journal od the Physical Society of Japan, 54, 4452-4461.

Takita, K, Uchino, T, Ipposhi, T and Masuda, K (1985) LPE crystal growth and magnetophonon resonance recombination of Hg1-xMnxTe. Solid State Commun., 56, 603.

Other

Amaratunga, G A J, Knee, N, Hart, M J and Evans, A G R (1985) Implantation and diffusion models for arsenic. IEE Colloquium, Simulation of Semiconductor Devices and Processes, London

Amaratunga, G A J, Sabine, K A and Evans, A G R (1985) Modelling of ion implantation in a three layer structures using the method of dose matching. Trans.IEEE, ED-32, 1889-1890.

Chor, E F, Ashburn, P and Brunnschweiler, A (1985) Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors. Electron Device Letters, EDL-6, 515-518.

Cuthbertson, A and Ashburn, P (1985) An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors. Trans Electron Devices, ED-32, 2399-2407.

Cuthbertson, A and Ashburn, P (1985) Self-aligned transistors with polysilicon emitters for bipolar VLSI. IEEE Trans Electron Devices, ED-32, 242.

Frenc, P J and Evans, A G R (1985) Polysilicon as a strain gauge material.

Frenc, P J and Evans, A G R (1985) Polysilicon as a strain gauge material.

French, P J and Evans, A G R (1985) Polycrystalline Silicon Strain Sensors. Sensors and Actuators, 8, 219-225.

French, P J and Evans, A G R (1985) Polycrystalline Silicon Strain Sensors. , 11-14.

Hart, M J, Amaratunga, G A J and Evans, A G R (1985) Rapid thermal annealing using a > dual-pulse=scanning electron beam annealing technique.

Hart, M J and Evans, A G R (1985) A Scanning Electron Beam Annealer with Electrostatic Deflection Systems. Journal of Physics, E, 18, 303-306.

Jesshope, C R and Ashburn, P (1985) An 12L clocked gate array for undergraduate design exercises. Proceedings Part 1, 132, 54.

Jorgensen, N, Barry, J C, Booker, G R, Ashburn, P, Wolstenholme, G R, Wilson, M C and Hunt, P C (1985) TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor. IOP Conference Series, 76, (Sectio), 471-474.

Sabine, K A, Amaratunga, G A J and Evans, A G R (1985) Threshold shift of NMOS transistors due to high energy source/drain implantation. IEEE Proc.I, 133, p, (3), 163-166.

This list was generated on Tue Oct 28 01:56:31 2014 GMT.