Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1986

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Jump to: B | C | E | F | H | R | W
Number of items: 15.

B

Burgraaf, P, Parker, G J and Thompson, W (1986) Focused Beam Implanter Trends. Semi.Intl, 82 - 83.

Burgraaf, P, Parker, G J and Thompson, W (1986) Focused Beam Implanter Trends. Semi.Intl., 82 - 83.

C

Champ, P, Cowern, N E B, Godfrey, D J, Willoughby, A F and Evans, A G R (1986) A model for boron diffusion in p+, n+ and lightly doped silicon.

Curtis, A R D, Redman-White, W and Nelson, P A (1986) The active control of flexural wave power flow in beams - theory. UNSPECIFIED

E

Evans, A G R and Farooqui, M M (1986) A Polysilicon Pressure Sensor. , 15-22.

Evans, A G R and Farooqui, M M (1986) A polysilicon pressure sensor.

F

French, P J and Evans, A G R (1986) Complete model of piezoresistance in polysilicon for strain gauge applications.

French, P J and Evans, A G R (1986) The Effect of Deposition of Temperature on LPCVD Polysilicon. Electron.Letts, 22, (13), 716-718.

French, P J and Evans, A G R (1986) Polycrystalline silicon as a strain gauge material. P.Phys.E: Sci Instrum, 19, 1055-1058.

H

Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Non equilibrium effects during RTA of Boron and Arsenic implants in silicon.

Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon. MRS Proc., 71, 429-434.

Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon.

R

Redman-White, W, Curtis, A R D and Nelson, P A (1986) The active control of flexural wave power flow in breams - experimental investigations. UNSPECIFIED

Resendiz-Rodriguez, F and Evans, A G R (1986) Voltage Discharge of Light Sensors in CCD Imaging Devices. IEEE Electron.Device Letts., EDL-7,, 306-307.

W

Willoughby, A F W, Evans, A G R, Champ, P, Yallop, K J and Godfrey, D J (1986) Diffusion of Boron in heavily doped n-and p-type silicon. J.Appl.Phys, 59, ((7)), 2392-2397.

This list was generated on Tue Aug 26 03:01:52 2014 BST.