Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1987

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Number of items: 19.

Amaratunga, G A J, Knee, N D, Hart, M J and Evans, A G R (1987) Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions. IEEE Electron Devices, ED-34, (2), 445-448.

Ashburn, P, Rezazadeh, A A, Chor, E F and Brunnschweiler, A (1987) Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits. IEEE Bipolar Circuits and Technology Meeting, 61-65.

Ashburn, P, Roulston, D J and Selvakumar, C R (1987) Comparison of experimental and computed results on arsenic and phosphorus doped polysilicon emitter bipolar transistors. Trans Electron Devices, ED-34, 1346-1353.

Evans, A and Hall, W (1987) Programming Inequality.

Farooqui, M M and Evans, A G R (1987) A polysilicon diaphragm based pressure sensor technology. J.Phys. E. Sci.Inst, 20, 1469-1471.

French, P J and Evans, A G R (1987) Polysilicon strain sensors using shear piezoresistance. , 379-382.

Hall, A M and Redman-White, W (1987) A quartz crystal oscillator with current controlled frequency trimming. IEEE Transactions on Circuits and Systems , CAS-34, (9), 1132 - 1133.

Hart, M J, Evans, A G R, Altrip, J L and Amaratunga, G A J (1987) Diffusion, clustering and defect assessment of CMOS source drain regions after e-beam annealing. Rapid thermal processing in semiconductor technology IOP Meeting, London

Hart, M J, Evans, A G R, Amaratunga, G A J and Altrip, J L (1987) A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing. MRS Proc., 92, 27-32.

Hart, M J, Evans, A G R, Amaratunga, G A J and Altrip, J L (1987) A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing. , 27-32.

Hart, M J, Evans, A G R, Amaratunga, G A J, Altrip, J L and Kijek, M (1987) Diffusion measurements and modelling of arsenic in silicon after scanning electron beam annealing.

Hart, M J, Evans, A G R and Bartlett, N K (1987) A Dual Pulse Scanning Electron-Beam annealer. Journal of Phys. E,, 20, 901-905.

Mizuta, Hiroshi, Yamaguchi, K. and Takahashi, S. (1987) Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's. IEEE Transactions on Electron Devices, ED-34, 2027-2033.

Redman-White, W, Nelson, P A and Curtia, A R D (1987) Experiments on the active control of flexural wave power flow. J Sound & Vibration, 112, (1), 187 - 191.

Takita, K, Akinaga, H, Katoh, H, Uchino, T, Ishigaki, T and Asano, H (1987) Anisotropic upper critical fields of orthorhombic single phase YBa2Cu3O7-d studied using preferentially oriented pellets. Jpn. J. Appl. Phys., 26, L1323.

Takita, K, Ipposhi, T, Uchino, T, Gochou, T and Masuda, K (1987) Superconductivity transition in high-Tc Y-Ba-Cu-O mixed-phase system. Jpn. J. Appl. Phys., 26, L506.

Takita, K, Uchino, T, Gochou, T and Masuda, K (1987) Magnetophonon resonance recombination with emission of two TA-phonons and impurity state in LPE- Hg1-xMnxTe. Solid State Commun., 61, 535.

Wolstenholme, G, Jorgensen, N, Ashburn, P and Booker, G R (1987) An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM. Journal of Applied Physics, 61, 225-233.

Yanokura, E., Mizuta, Hiroshi, Mori, M. and Takahashi, S. (1987) GaAs MESFET's fabricated by new self-alignment technology. At 19th Conference on Solid State Devices and Materials, Tokyo, , pp 263-266.

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