Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1988
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Altrip, J L, Evans, A G R, Hart, M J, Amaratunga, G A J and Kijek, M (1988) Diffusion and activation studies of rapid thermally annealed arsenic implanted silicon. UK IT 88 Conference, 398-402.
Ashburn, P, Rezazadeh, A A, Chor, E F and Brunnschweiler, A (1988) Use of a gate delay expression to compare self-aligned silicon bipolar and AlGaAs/GaAs heterojunction bipolar technologies. Journal de Physique, 49, (Supple), 571-574.
Carter, J C, Blackburn, A and Evans, A G R (1988) Evaluation of damage to MOS devices fabricated on dry etched substrates.
Castaner, L, Ashburn, P, Prat, L and Wolstenholme, G (1988) The asymptotes of the base current in bipolar devices. IEEE Trans Electron Devioces, ED-35, 1902-1908.
Chor, E F, Brunnschweiler, A and Ashburn, P (1988) A gate delay expression for the optimisation of ECL processes. Journal of Solid State Circuits, SC-23, 251-259.
Ensell, G, Holmes-Siedle, A and Adams, L (1988) Thick oxide pMOSFET dosimeters for high energy radiation. Nuclear Instruments and Methods in Physics Research, A269, 655-658.
Evans, A and Hall, W (1988) Gender Inequality and Computer Education. NUT Education Review, 1, (3), 45-51.
Farooqui, M M and Evans, A G R (1988) Polysilicon capacitative pressure sensors.
Farooqui, M M, Roberts, P T E and Evans, A G R (1988) Polysilicon diaphragms for sensor applications. Silicon and other materials in the Solid State
French, P J and Evans, A G R (1988) Peizoresistance in single crystal and polycrystalline silicon. , 94-101.
French, P J and Evans, A G R (1988) Polysilicon strain sensors using shear piezoresistance. Sensors and Actuators, 15, 257-272.
Hart, M J and Evans, A G R (1988) Rapid thermal processing in semiconductor technology. Semicond.Sci Technol, 3, 421-436.
Hasko, D G, Potts, A, Cleaver, J R A, Smith, C G and Ahmed, H (1988) Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon. Journal of Vacuum Science and Technology B, 6, (6), 1849-1851.
Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1988) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. At 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta,
Kusano, C., Tanoue, T., Mizuta, Hiroshi and Takahashi, S. (1988) Multiple-valued logic applications of a triple-well resonant tunneling diode. At Device Research Conference
Kusano, C. , Tanoue, T. , Mizuta, Hiroshi and Takahashi, S. (1988) Multiple-valued logic application of a triple-well resonant tunneling diode. IEEE Transactions on Electron Devices, ED-35, pp. 2453.
Mizuta, Hiroshi, Tanoue, T. and Takahashi, S. (1988) A new triple-well resonant tunneling diode with controllable double-negative resistance. IEEE Transactions on Electrons Devices, ED-35, 1951-1956.
Nanu, L and Evans, A G R (1988) Model for Phosphorus diffusion in silicon during rapid thermal annealing.
Parker, G J (1988) Report on Integration Techniques for Compound Semiconductors.
Potts, A, Hasko, D G, Cleaver, J R A and Ahmed, H. (1988) Fabrication of free-standing single-crystal silicon wires. Applied Physics Letters, 52, (10), 834-835.
Redman-White, W, Dunn, T R, Lucas, D R and Winchcombe, S A (1988) A radiation hard frequency reference IC. UNSPECIFIED
redman-White, W, Dunn, T R, Lucas, D R and Winchcombe, S A (1988) A radiation hard frequency reference IC. IEEE Trans Nuclear Science, 35, 1368 - 1372.
Tanoue, T., Mizuta, Hiroshi and Takahashi, S. (1988) Double negative resistance properties of a triple-well resonant tunneling diode. At Advanced Heterostructure Device Workshop Hawaii, Hawaii,
Tanoue, T. , Mizuta, Hiroshi and Takahashi, S. (1988) A Triple-well resonant tunneling diode for multiple-valued logic application. IEEE Transactions on Electron Devices, EDL-9, 265-367.
Wolstenholme, G R, Ashburn, P, Jorgensen, N, Gold, D and RBooker, G (1988) Measurement and modelling of the emitter resistance of polysilicon emitter bipolar transistors. , 55-58.
Wolstenholme, G R, Browne, D C, Ashburn, P and Landsberg, P T (1988) An investigation of the transition from polysilicon emitter to SIS emitter behaviour. IEEE Trans Electron Devices, ED-35, 1915-1923.