Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1989

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Number of items: 25.

Ashburn, P (1989) Polysilicon Emitter Technology. , 90-93.

Ashburn, P, Rezazadeh, A A, Chor, EF and Brunnschweiler, A (1989) Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression. Journal of Solid State Circuits, SC24, 512-519.

Castaner, L and Ashburn, P (1989) Vertical scalability of forward delay times in bipolar transistors. IEEE Trans Electron Devices, ED36, 1841-1844.

Farooqui, M M, Roberts, P TE and Evans, A G R (1989) Fabrication of polysilicon diaphragms and allied structures.

French, P J and Evans, A G R (1989) Piezoresistance in polysilicon and its application to strain gauges. Solid State Electronics, 32, (1), 1-10.

Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1989) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. Institute of Physics Conference Series 96, J. Harris eds., 487-490.

Hiruma, K. , Mori, M. , Yanakura, E. , Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy. IEEE Transactions on Electron Devices, ED-36, 314-318.

Kusano, C., Mizuta, Hiroshi and Yamaguchi, K. (1989) The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors. At 1989 American Physical Society Meeting

Mizuta, Hiroshi, Tanoue, T. and Takahashi, S. (1989) Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes. At IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, , pp 274-283.

Mizuta, Hiroshi, Yamaguchi, K. , Yamane, M. , Tanoue, T. and Takahashi, S. (1989) Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's. IEEE Transactions on Electron Devices, ED-36, 2307-2314.

Murray, D C, Carter, J C, Evans, A G R and Altrip, J L (1989) The effects of RHA on CMOS Devices.

Murray, D C, Carter, J C, Evans, A G R and Altrip, J L (1989) The inferior quality of RTA MOSFET interfaces. J.Phys: Conds.Matter, 1, 219-220.

Murray, D C, Evans, A G R, Altrip, J L, Carter, J C and Gougam, A (1989) An investigation into the effects of RTA processing on low frequency noise and other characteristics of CMOSFETS. , 557-560.

Murray, D C, Siabi-Shahrivar, N, Carter, J C, Evans, A G R and Redman-White, W (1989) Increase of low frequency noise generating defects in today's CMOS/BICMOS technologies.

Murray, D C, Siabi-Shahrivar, N, Evans, A G R, Carter, J C and Redman-White, W (1989) Increase of low frequency noise generating defects in todays CMOS/BICOM technologies. Mat.Sci & Eng., B4, 367-372.

Murray, D C, Siabi-Shahrivar, N, Evans, A G R, Redman-White, W, Carter, J C and Altrip, J L (1989) Increased low frequency noise generating defects in today's CMOS/BICMOS technologies. In, European Materials Research Conference, Strasbourg, France,

Parker, G J (1989) A Novel Triggerred Spark-Gap for High Power Xenon Flash. , 3337 - 3338.

Post, I R C and Ashburn, P (1989) Fabrication and characgterisation of pnp polysilicon emitter bipolar transistors. , 453.

Redman-White, W and Bourner, D J L (1989) Improved linearity in multi-level converters by spectral dispersion of D/A distortion products. UNSPECIFIED

Redman-White, W, Dunn, T R, Lucas, D R, Smithers, P A and Winchcombe, S A (1989) A radiation hard quartz oscillator. UNSPECIFIED

Redman-White, W, Lam, Y Y H, Bedworth, M and Bounds, D (1989) A limited connectivity switched capacitor neural processing element with digital storage of binary weighting elements. UNSPECIFIED

Shafi, Z A, Ashburn, P and Parker, G J (1989) Predicted propogation delay of Si/Si1-xGEx heterojunction bipolar circuits. , 781-784.

Takita, K, Uchino, T and Masuda, K (1989) LPE crystal growth and magnetophonon resonance recombination of Hg1-x-yCdxMnyTe. 5th International Conference on Narrow Gap Semiconductors and Related Materials, Maryland, USA

Uchino, T, Takita, K and Masuda, K (1989) Magnetophonon resonance recombination of heated carriers with emission of two TA-phonons in LPE-Hg1-xMnxTe. J. Phys. Soc. Jpn., 58, 627.

Uchino, T, Takita, K and Masuda, K, Landwehr, G (ed.) (1989) Magnetophonon resonance recombination studies of Hg1-x-yCdxMnyTe using LPE crystals. High magnetic fields in semiconductor physics II, Springer Series in Solid-State Sciences, 518.

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