Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1990

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Number of items: 35.

A

Altrip, J L, Evans, A G R, Logan, J R and Jeynes, C (1990) Towards the limit of Ion Implantation and rapid thermal annealing as a technique for shallow junction formation. , 221-224.

Atrip, J L, Evans, A G R, Logan, J R and Jeynes, C (1990) High temperature millisecond annealing of arsenic implanted silicon. Solid State Electron, 33, (6), 759-764.

B

Biswas, R, Amaratunga, G A J, Evans, A G R and Roberts, P T E (1990) Parallel Computational techniques for simulating the coupled diffusion of impurities in silicon.

Biswas, R, Amaratunga, G A J, Evans, A G R and Roberts, P T E (1990) Parallel Computational techniquess for simulating the coupled diffusion of impurities and defects in silicon.

Brown, A D, Zwolinski, M and Redman-White, W (1990) Mixed mode simulation of oversampled A/D converters. UNSPECIFIED

Brown, A D, Zwolinski, M and Redman-White, W (1990) Mixed mode simulation of oversampled A/D converters. UNSPECIFIED

F

Fang, W, Brunnschweiler, A and Ashburn, P (1990) An analytical maximum toggle frequency expression and its application to optimising high-speed ECL frequency dividers. IEEE Journal of Solid State Circuits, SC25, 920-930.

Farooqui, M M, Leong, D and Evans, A G R (1990) Silicon cantilevers with integral tips for atomic force microscopy.

G

Goodings, C. J. , Mizuta, Hiroshi, Ochiai, Y., Cleaver, J. R. A. and Ahmed, H. (1990) Fabrication of lateral superlattices on GaAs/AlGaAs heterostructures by gas-assisted focused ion beam etching. At Symposium on Nanostructures: Fabrication and physics, 1990 Fall Meeting of Materials Research Society, Boston,

H

Howes, R, Redman-White, W, Nicols, K G, Murray, S J, Lucas, R and Mole, P J (1990) Device modelling and design techniques fdor analogue SOS circuits. UNSPECIFIED

Howes, R, Redman-White, W, Nicols, K G, Murray, S J and Mole, P J (1990) Modelling and simulation of silicon on Sapphire MOSFETs for analogue circuit design. UNSPECIFIED

L

Leong, K H, Ensell, G, Wall, P and Pickard, R S (1990) Multichannel microelectrode probes machined in silicon. Biosensors and Bioelectronics, 5, 303-310.

M

Murray, D C, Carter, J C and Evans, A G R (1990) CMOS 1/f noise: n-channel versus p-channel. Appl.Phys., A 51, 337-339.

Murray, D C, Evans, A G R, Atrip, J L and Carter, J C (1990) The effects of RTA on CMOS devices. Sci&Technol, 759-764.

P

Parker, Dr G J, Shafi, Z A and Ashburn, P (1990) Predicted propagation delay on Si/Si:Ge heterojunction bipolar circuits. IEEE J Solid State Circuits, 25, (5), 1268 -1276.

Parker, Dr G J and Starbuck, C M K (1990) Selective silicon epitaxial growth by LPCVD using silane. Elec Letts, 26, (13), 831-832.

Parker, G J (1990) Thick Selective Silicon Epitaxial Growth by LPCVD from Pure Silane. Semi.Intl., 24 - 26.

Pickard, R S, Wall, P, Ubeid, M, Ensell, G and Leong, K H (1990) Recording neural activity in the honeybee brain with micromachined silicon sensors. Sensors and Actuators, B1, 460-463.

Post, IRC and Ashburn, P (1990) Electrical method for measuring the emitter depth of shallow bipolar transistors. Electronics Letters, 26, 30-31.

Potts, A, Hasko, D G, Cleaver, J R A, Smith, C G, Ahmed, H, Kelly, M J, Frost, J E F, Jones, G A C, Peacock, D C and Ritchie, D A (1990) Quantum conductivity corrections in free-standing and supported n<SUP>+</SUP> GaAs wires. Journal of Physics: Condensed Matter, 2, (7), 1807-1815.

Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C (1990) Electron heating effects in free-standing single-crystal GaAs fine wires. Journal of Physics: Condensed Matter, 2, (7), 1817-1825.

Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C (1990) Thermal transport in free-standing single-crystal GaAs wires. In, Microelectronic Engineering 89, Cambridge , UK, 26 - 28 Sep 1989. Elsevier Science Publishers B. V., 15-18.

Potts, A, Williams, D A, Young, R J, Blaikie, R J, McMahon, R A, Hasko, D G, Cleaver, J R A and Ahmed, H (1990) Fabrication of free-standing single-crystal silicon nanostructures for the study of thermal transport and defect scattering in low dimensional systems. Japanese Journal of Applied Physics Part 1, 29, (11), 2675-2679.

R

Redman-White, W, Dunn, R, Lucas, R and Smithers, P (1990) A radiation hard AGC stabilised SOS crystal oscillator. IEEE J Solid State Circuits, 25, (1), 282 - 288.

Roulston, D J, Gold, D P, Ashburn, P and Booker, G R (1990) Study of thin oxide tunnel parameters for polysilicon emitters using computer simulation and experimental results. Solid State Electronics, 33, 753-755.

S

Shafi, Z A and Ashburn, P (1990) Silicon based pseudo-heterojunction bipolar transistors. , 393-396.

Shafi, Z A, Ashburn, P and Parker, G J (1990) Predicted propagation delay of Si'SiGe heterojunction bipolar ECL circuits. Solid State Circuits, SC25, 1268-1276.

Siabi-Shahrirvar, N, Redman-White, W, Ashburn, P and Post, I (1990) Low frequency noise of NPN/PNP polysilicon emitter bipolar transistors. UNSPECIFIED

Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Low frequency noise performance of NPN/PNP polysilicon emitter bipolar transistors. UNSPECIFIED

Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors. , 236-239.

Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors. UNSPECIFIED

T

Takita, K, Uchino, T and Masuda, K (1990) LPE crystal growth and magnetophonon resonance recombination of Hg1-x-yCdxMnyTe. Semicond. Sci. Technol., 5, S277.

Tanoue, T. and Mizuta, Hiroshi (1990) Multiple-well RTD with InGaAs strained quantum wells. At Advanced Heterostructure Device Workshop, Hawaii,

U

Usagawa, T., Rabinzohn, P. D., Mizuta, Hiroshi, Hiruma, K., Kawata, M. and Yamaguchi, K. (1990) Comprehensive analysis of bifunctional 2DEG-HBTs. At 22nd Conference on Solid State Devices and Materials, Sendai, , pp 59-62.

W

Williams, J D, Ashburn, P, Moisewitsch, N E, Gold, D P, Whitehurst, J, Booker, G R and Wolstenholme, G R (1990) Epitaxial regrowth in double-diffused polysilicon emitters. , 381-384.

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