Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1991
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Afshar-Hanaee, N, Bonar, J M, Evans, A G R, Starbuck, C M K, Parker, G J and Kemhadjian, H A (1991) Thick selective epitaxial growth of silicon at 960 deg C using silane only.
Afshar-Nanaii, N, Bonar, J M, Evans, A G R, Parker, G J and Starbuck, C M K (1991) Thick selective expitaxial growth of silicon at 960oC using silane only.
Altrip, J L, Evans, A G R, Young, N D and Logan, J R (1991) The nature of Electrically inactive implanted arsenic in Silicon after rapid thermal annealing. Materials Res.Soc.Symp. Proceedings, 224, 49-54.
Brown, A D and Redman-White, W (1991) Bipolar analogue circuits. In, Brown, A D (eds.) UNSPECIFIED Circuits and systems on silicon , McGraw-Hill,London, 80 - 98.
Carter, J C and Evans, A G R (1991) Delineation of junctions using secco and period etches. Electron.Letts., 27, (23), 2135-2136.
Castaner, L M, Ashburn, P and Wolstenholme, G R (1991) Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors. IEEE Electron Device Letters, 12, 10-12.
Durham, A M, Redman-White, W and Hughes, J B (1991) Digitally tunable continuous-time filters with high signal linearity. UNSPECIFIED
Durham, A M, Redman-White, W and Hughes, J B (1991) Low distortion VLSI compatible self-tuned continuous time monolithic filters. UNSPECIFIED
Evans, A G R (1991) Design rules, verification and scaling. , 332-347.
Evans, A G R (1991) MOS processes: A D Brown ed. , 285-302.
Farooqui, M M and Evans, A G R (1991) Polysilicon Microstructures. , 187-191.
Farooqui, M M and Evans, A G R (1991) Polysilicon Microstructures.
Farooqui, M M, Evans, A G R, Stedman, M and Haycocks, J A (1991) Cantilevers with integral tips for atomic force microscopy.
Farooqui, M M, Evans, A G R, Stedman, M and Haycocks, J A (1991) Micromachined sensors for atomic force microscopy. Sensors technology, systems and applications, 373-378.
Ho, S., Mizuta, Hiroshi and Yamaguchi, K. (1991) Effects of reservoirs on tunneling and interference in mesoscopic systems. At Condensed Matter and Material Physics Conference 1991, Birmingham,
Hockley, M, Tuppen, C G, Gibbings, C J, Shafi, Z A and Ashburn, P (1991) TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors.
Howes, R and Redman-White, W (1991) Frequency dependent small-signal drain characteristics in silcon-on-sapphire MOSFETs. UNSPECIFIED
Howes, R and Redman-White, W (1991) Measurement and analysis of small-signal drain admittance in SOS MOSFETs. Electronics Letters, 27, (24), 2290-2292.
Howes, R, Redman-White, W, Nicols, K G, Bird, S, Robinson, M and Mole, P J (1991) A charge conserving SOS MOSFET model including radiation effects for circuit simulation. UNSPECIFIED
Howes, R, Redman-White, W, Nicols, K G, Murray, S, Robinson, M and Mole, P (1991) A charge conserving silicon-on-sapphire SPICE MOSFET model for analogue design. UNSPECIFIED
Howes, R, Redman-White, W, Nicols, K G, Robinson, M, Kerr, J and Mole, P J (1991) A SOS MOSFET SPICE model for confident analogue design. UNSPECIFIED
Mizuta, Hiroshi and Goodings, C. J. (1991) Density matrix calculations of femtosecond electron dynamics in resonant tunnelling diodes. At 11th general conference of the condensed matter division of European Physical Society, Exeter,
Mizuta, Hiroshi and Goodings, C. J. (1991) Transient quantum transport simulation based on the statistical density matrix. At Institute of Physics semiconductor group meeting, Sheffield,
Mizuta, Hiroshi and Goodings, C. J. (1991) Transient quantum transport simulation based on the statistical density matrix. Journal of Physics: Condensed Matter, 3, 3739-3756.
Murray, D C, Carter, J C, Afshar-Hanaii, N, Evans, A G R, Taylor, S, Zhang, J and Eccleson, W (1991) Noise and other electrical characteristics of CMOSFETS fabricated with furnafe, anodic and rapid thermal oxides. , 183-186.
Murray, D C, Evans, A G R and Carter, J C (1991) Shallow defects responsible for G-R noise in MOSFETS. IEEE ED, 38, (2), 407-415.
Nanba, M, Kobayashi, T, Uchino, T, Nakamura, T, Kondo, M, Tamaki, Y, Iijima, S, Kure, T and Tanabe, M (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology. IEDM Tech. Digest, 443.
Parker, G J, Bonar, J M and Starbuck, C M K (1991) Long incubation times for selective epitaxal growth of silicon using silane only. Elec Letts, 27, (17), 1595-1597.
Parker, G J and Starbuck, C M K (1991) A New Semiconductor Depisition System. Research Journal, The University of Southampton
Post, I R C and Ashburn, Peter (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions. IEEE Trans Electron Devices, ED38, 2442-2451.
Potts, A., Kelly, M. J., Hasko, D. G., Smith, C. G., Cleaver, J. R. A., Ahmed, H., Peacock, D. C., Frost, J. E. F., Ritchie, D. A., Jones, G. A. C., Singleton, J. and Janssen, T. J. B. M. (1991) Thermal transport in free-standing semiconductor fine wires. Superlattices and Microstructures, 9, (3), 315-318.
Rabinzohn, P. D. , Usagawa, T. , Mizuta, Hiroshi and Yamaguchi, K. (1991) The new two-dimensional electron gas base HBT (2DEG-HBT): Two-dimensional numerical simulation. IEEE Transactions on Electron Devices, ED-38, 222-231.
Redman-White, W and Durham, A M (1991) A fourth order converter with self-tuning continuous time noise shaper. UNSPECIFIED
Redman-White, W. (1991) CMOS analogue circuits. In, Brown, A. (eds.) Circuits and Systems in Silicon. , McGraw-Hill, London, 124-142.
Shafi, Z A, Gibbings, C J, Ashburn, P, Post, I R C, Tuppen, C G and Godfrey, D J (1991) The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors. IEEE Trans Electron Devices, ED38, 1973-1976.
Shafi, Z A, Martin, A S R, Ashburn, P, Godfrey, D J, Gibbings, C, Post, I R C, Tuppen, C and Jones, M E (1991) Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors. , 135-138.
Shafi, Z A, Post, I R C, Whitehurst, J, Wensley, P, Ashburn, P, Moynagh, P B and Booker, G R (1991) Poly-crystalline silicon-carbide (SiCarb) emitter bipolar transistors. , 67-70.
Starbuck, C M K and Parker, G J (1991) A New Semiconductor Deposition System. Research Journal, The University of Southampton
Tomlinson, R D, Hill, A E., Imaniah, M, Pilkington, R D, Slifkin, M and Bagnall, D M (1991) Changes in the opto-electronic properties of CuInSe2 following ion implantation.