Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1992
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Duram, A M, Hughes, J B and Redman-White, W (1992) Circuit architectures for high-linearity monolithic continuous-time filters. IEEE Trans on Circuits and Systems Part II, 39, (9), 651 - 657.
Durham, A M, Redman-White, W and Hughes, J B (1992) High linearity continuous-time filters in VLSI compatible CMOS. IEEE Journal of Solid State Circuits, 27, (9), 1270 - 1276.
Howes, R and Redman-?White, W (1992) A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs. IEEE Journal of Solid State Circuits, 27, (8), 1186 - 1193.
Howes, R, redman-White, W, Nicols, K G, Murray, S J and Mole, P J (1992) A silicon on sapphire model for analogue circuit simulation. IEE Proceedings - G, 139, (1), 33 - 36.
Kelly, M J, Potts, A, Hamilton, A, Tewordt, M, Pepper, M, Law, V J, Frost, J E F, Ritchie, D A, Jones, G A C, Hasko, D G and Ahmed, H (1992) Quasi-one dimensional transport in semiconductor microstructures. Physica Scripta, T45, 200-205.
Kusano, C. , Mizuta, Hiroshi, Mochizuki, K. and Yamaguchi, K. (1992) Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors. Japanese Journal of Applied Physics, 31, L1650-L1653.
Mizuta, Hiroshi, Goodings, C. J. , Wagner, M. and Ho, S. (1992) Three-dimensional numerical simulation of multi-mode quantum transport in zero-dimensional resonant tunneling diodes. Journal of Physics: Condensed Matter, 4, 8783-8800.
Potts, A, Kelly, M J, Hasko, D G, Cleaver, J R A, Ahmed, H, Ritchie, D A, Frost, J E F and Jones, G A C (1992) Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons. Semiconductor Science and Technology, 7, (3B), B231-B234.
Durham, A M, Redman-White, W and Hughes, J B (1992) Low distortion VLSI compatible self-tuned continuous time monolithic filters. In, UNSPECIFIED Continuous-time filters , IEEE Press, New York , Voorman and Tsividis, 333-336.
Conference or Workshop Item
Durham, A M and Redman-White, W (1992) Integrated continuous-time balanced filters for 16-bit DSP interfaces. UNSPECIFIED
Durham, A M and Redman-White, W (1992) Low-distrotion continuous-time integrated CMOS filters for the audio-DSP interface. UNSPECIFIED
Mizuta, Hiroshi, Goodings, C., Wagner, M. and Ho, S. (1992) Quantum transport in laterally confined resonant tunnelling structures. At Condensed Matter and Material Physics Conference 1992, Sheffield,
Mizuta, Hiroshi, Wagner, M., Ho, S. and Yamaguchi, K. (1992) Three-dimensioal numerical simulation of multi-mode quantum transport in zero-dimensioanl resonant tunnelling diodes. At 1st International Workshop on Quantum Functional Devices, Nasu Heights,
Redman-White, W, Uren, M J, Bunyan, R J T, Lee, M and Alderman, J C (1992) Electrical and thermal feedbacks effects on the small signal-drain characteristics of partially depleted SOI MOSFETs. UNSPECIFIED
Wagner, M. and Mizuta, Hiroshi (1992) Effect of LO-phonon scattering on electrical bistability in resonant tunneling diodes. At 1st International Workshop on Quantum Functional Devices, Nasu Heights,
Yazawa, Y., Mizuta, Hiroshi, Fukatsu, S., Gossard, A. C. and Shiraki, Y. (1992) Optical properties of electric field controlled lateral superlattices. At 2nd International Symposium on "New Phenomena in Mesoscopic Structures, Kauai,
Afshar-Hanaii, N, Bonar, J M, Evans, A G R, Parker, E H C, Starbuck, C M K and Kemhadjian, H A (1992) Thick selective epitaxial growth of silicon at 960oC using silane only. Microelectronic Engineering, 18, 237-246.
Afshar-Nanaii, N, Evans, A G R and Starbuck, C M K (1992) Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only.
Altrip, J L and Evans, A G R (1992) Anomalous Electrical deactivation of low concentration rapid thermally annealed arsenic implanted silicon. 19, 367-370.
Ensell, G, Evans, A G R, Farooqui, M, Stedman, M and Haycocks, J A (1992) Nanometrological Micromachined Artefacts. Journal of Micromechanics and Microengineering, 2, (3), 179-180.
Ensell, G, Evans, A G R, Farooqui, MM, Haycocks, J A and Stedman, M (1992) Nanometrological Micromachined Artefacts. Journal of Micromechanics and Microengineering, 2, (3), 179-180.
Fang, W, Brunnschweiler, A and Ashburn, P (1992) An accurate analytical BiCMOS delay expression and its application to optimising high-speed BiCMOS circuits. IEEE Journal of Solid State Circuits, SC-27, 191-202.
Farooqui, M M and Evans, A G R (1992) Microfabrication of submicron nozzles in silicon nitride. IEEE/ASME Journal of Microelectromechanical Systems, 1, (2), 86-88.
Farooqui, M M and Evans, A G R (1992) A novel process for fabricating force sensors for atomic force microscopy. Mat. Res.Soc.Proc, 276, 253-263.
Farooqui, M M and Evans, A G R (1992) A novel process for fabricating force sensors for atomic force microscopy. MRS Symposia Proceedings, 276, 253-263.
Farooqui, M M, Evans, A G R, Stedman, M and Haycocks, J (1992) Micromachined silicon sensors for atomic force microscopy. Nanotechnology, 3, 91-97.
Flowers, M C, Jonathan, N B, Laurie, A B, Morris, A and Parker, G J (1992) New precursor for growing nitride films. J Mater Chem, 2, (3), 365 - 366.
Parker, G J, Bonar, J M and Starbuck, C M K (1992) Radiant heater assembly for limited reaction-rate processing applications. Rev Sci Instrum, (63), 3174 - 3176.
Post, I R C and Ashburn, P (1992) The use of an interface anneal to control the base current and emitter resistance of pnp polysilicon emitter bipolar transistors. IEEE Electron Device Letters, EDL-13, 408-410.
Post, I R C, Ashburn, P and Nouailhat, A (1992) A heterojunction tunnelling model for pnl and npn polysilicon emitter bipolar transistors. Electronics Letters, 28, 2276-2277.
Post, I R C, Ashburn, P and Wolstenholme, G R (1992) Polysilicon emitter bipolar transistors : a review and re-evaluation of theory and experiment. IEEE Trans Electron Devices, ED-39, 1717-1731.
Potts, A, Singleton, J, Janssen, T J B M, Kelly, M J, Smith, C G, Hasko, D G, Peacock, D C, Frost, J E F, Ritchie, D A, Jones, G A C, Cleaver, J R A and Ahmed, H, Landwehr, G (ed.) (1992) Thermal transport in free-standing GaAs wires in a high magnetic field. , 325-8.
Robbins, D J, Leong, W Y, Glasper, J L, Pidduck, A J, Jackson, R, Post, I R C, Shafi, Z A and Ashburn, P (1992) Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants. , 447-450.
Scharff, C, Carter, J C and Evans, A G R (1992) New Fast MOSFETS parameter extraction method. Electronic Letts, 28, (21), 2006-2008.
Williams, J D and Ashburn, P (1992) Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions. Journal of Applied Physics, 72, 3169-3178.
Zammit, C C, Sumner, T J, Hepburn, I D, Ade, P A R, Hutchin, P and Ensell, G (1992) The epitaxial Si bolometer: an alternative to ion implanted devices.
Zegadi, A, Tomlinson, R D, Bagnall, D M, Djamin, M, Slifkin, M A, Hill, A E and Neumann, H (1992) A photoacoustic study of CuInSe2 and CuIn x Ga1 Se2 Compunds.