Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1994

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Number of items: 36.

A

Ashburn, P, Nouailhat, A and Chantre, A (1994) Measurement of the bandgap narrowing in the base of Si homojunction and Si/SiGe heterojunction bipolar transistors from the temperature dependence of the collector current: Supplement C6. Journal de Physique, 4, 123-126.

Ashburn, P, Nouailhat, A, Hashim, M D R, Parker, G J, Mouis, M and Robbins, D J (1994) Temperature dependence of the current gain of Si/SiGe for device applications. , 477-480.

B

Bonar, J M, Parker, G J, Hamel, J S and Ashburn, P (1994) LPCVD growth of SiGe for device applications.

Bonar, J M, Parker, G J, Hamel, J S and Ashburn, P (1994) LPCVD Growth of Silicon-Germanium for Device Applications. Research Journal, The University of Southampton

C

Chen, W, Amaratunga, G A J, Narayanan, E M S, Humphry, J and Evans, A G R (1994) A CMOS compatible Lateral Emitter switched thyristor with enhanced turn-on capability. IEEE Electron Device Letters, 15, (11), 482-484.

Chen, W, Amaratunga, G A J, Narayanan, E M S, Humphry, J and Evans, A G R (1994) A CMOS compatible Lateral Emitter switched thyristor with enhanced. IEEE Electron Device Letters, 15, (11), 482-484.

F

Farooqui, M M and Evans, A G R (1994) Solid and hollow micro and nano spherical structures in polysilicon and phosphosilicate glasses. , 57-62.

G

Giroult-Matlakowski, G, Bousetta, H, LeTron, B, Dutartre, D, Warren, P, Bouzid, M J, Nouailhat, A, Ashburn, P and Chantre, A (1994) Low temperature performance of self-aligned,etched polysilicon emitter pseudo-HBTs. Journal de Physique, 4, (C6), 111-115.

Glover, M, Redman-White, W, Srodzinski, D, Dobbs, S, Stavely, P and Fowers, P (1994) An integrated CMOS DQPSK demodulator for NICAM data recovery. UNSPECIFIED

Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science , 305, 363-368.

Goodings, C. J. , Mizuta, Hiroshi and Cleaver, J. R. A. (1994) Electrical studies of charge build-up and phonon-assisted tunneling in double-barrier materials with very thick spacer layers. Journal of Applied Physics, 75, 2291-2293.

Goodings, C. J. , Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1994) Variable-area resonant tunneling diodes using implanted in-plane gates. Journal of Applied Physics, 76, 1276-1286.

Goodings, C.J., Mizuta, Hiroshi, Cleaver, J.R.A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science, 305, 363-368.

H

Harris, R, Brunnschweiler, A and Ensell, G J (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability.

Harris, R, Brunnschweiler, A and Ensell, G J (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120KGy capability.

Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, Hiroshi and Yamaguchi, K. (1994) Theoretical analysis of transconductance enhancement caused by electron-concentration- dependent screening in heavily doped systems. IEICE Trans. Electron, E77-C, 155-160.

Ho, S., Oohira, M., Kagaya, O., Moriyoshi, A., Mizuta, Hiroshi and Yamaguchi, K. (1994) Dynamic simulation of multiple trapping processes and anomalous frequency dependence in GaAs MESFETs. IEICE Trans. Electron, E77-C, 187-193.

Howes, R, Redman-White, Q, Nichols, K G, Robinson, M, bird, S and Mole, P J (1994) A silicon on sapphire MOSFET based on the calculation of surface potential. IEE Trans Computer Aided Design of Integrated Circuits, 13, (4), 494 - 506.

L

Lewis, C P, Kraft, M and Hesketh, T G (1994) The Development of a Digital Accelerometer. In, 27th ISATA, Aachen, , 873-879.

M

Marty, A, Nouailhat, A and Ashburn, P (1994) Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology. Japanese Journal of Applied Physics, 33, 3844-3852.

Moiseiwitsch, N E and Ashburn, P (1994) Interfacial oxide break-up in npn polysilicon emitter bipolar transistors by fluorine implantation. , 55-58.

Moisiewitsch, N E and Ashburn, P (1994) The benefits of fluorine in pnp polysilicon emitter bipolar transistors. IEEE Trans Electron Devices, (41), 1249-1255.

O

Ohkura, Y. , Mizuta, Hiroshi, Ohbu, I. , Kagaya, O. , Katayama, K. and Ihara, S. (1994) The electron mobility transition in n-GaAs heavily doped channel. Semiconductor Science and Technology, 9, 811-814.

P

Parker, G J (1994) Introductory Semiconductor Device Physics.

Pember, A, Smith, J G and Kemhadjian, H A (1994) Long Term Stability of Silicon Bridge Oscillators Fabricated using Boron Etch Stop. Sensors and Acturators A Physical, 46, (1-3)

Pember, A, Smith, J G and Kemhadjian, H A (1994) Long Term Stability of Silicon Bridge Oscillators Fabricated using the Boron Etch Stop.

Post, I R C, Ashburn, P and Nouailhat, A (1994) An investigation of the inconsistency in barrier heights for pnp and npn polysilicon emitter bipolar transistors using a new tunneling model. Japanese Journal of Applied Physics, 1275-1284.

R

Redman-White, W, Bracey, M, Tijou, J, Murray, B and Hopwood, C (1994) An analogue CMOS front-end for a D2-MAC TV decoder. IEEE Journal of Solid State Circuits, 29, (4), 998 - 1001.

Redman-White, W and Durham, A M (1994) An integrated fourth order converter with stable self-tuning continuous time noise shaper. IEE Proceedings on circuits, Devices and Systems, 141, (3), 145 - 150.

Routley, P, Brunnschweiler, A and Ashburn, P (1994) Optimisation of BiCMOS buffers for low voltage applications. Electronics Letters, 30, 1046-1048.

S

Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Kemhadjian, H A (1994) Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors.

T

Tryzna, M, Neuteboom, H, Nandra, N and Redman-White, W (1994) An 8-bit 3MS/s CMOS two-step flash converter for low voltagfe mixed signal CMOS integration. UNSPECIFIED

W

Waite, A, Evans, A G R and Afshar-Hanaii, N (1994) Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane. Electronics letter, 30, (17), 1455-1456.

Waite, A M, Evans, A G R and Afshar-Hanaii, N (1994) Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane.

Z

Zegadi, , Bagnall, D M, Hill, A E, Slifkin, M A, Neumann, H and Tomlinson, R D (1994) Defect levels in CuInSe2 studied by photoacoustic spectroscopy.

Zhang, J P, Wilson, R J, Hemment, P L F, Claverie, A, Cristiano, F, Sallers, P, Wen, J Q, Evans, J H, Peaker, A R and Parker, G J (1994) Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation. Nuclear Instruments & Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms, 84, (2), 222 - 228.

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