Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 2001

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Number of items: 93.

Hughes, John, Redman-White, William and Bracey, Mark (Patent Holders) (2001) Analogue to digital converter. 6313780.

(2001) Comparison of two novel control strategies for a closed loop micromachined tunnelling accelerometer. Proceedings of 4th Conference on Simulation of Micosystems, Hilton Head Island of America, United States, , 100-103.

Redman-White, William (Patent Holder) (2001) Peak detector. US Patent 6208173.

Alavi, F N, Kraft, M and King, D O (2001) Sensitivity analysis of a high performance accelerometer. At Micromechanics Europe, Cork, Ireland, , 305-308.

Amakawa, S., Mizuta, Hiroshi and Nakazato, K. (2001) Analysis of multi-phase clocked electron pump circuits. At 2001 Silicon Nanoelectronics Workshop, Kyoto, , 30.

Amakawa, S. , Mizuta, Hiroshi, Nakazato, K. and Ahmed, H. (2001) Analysis of multi-phase clocked electron pumps consisting of single-electron transistors. Journal of Applied Physics, 89, 5001-5008.

Anteney, I.M., Parker, G.J., Ashburn, P. and Kemhadjian, H.A. (2001) The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films. Journal of Applied Physics, 90, (12), 6182-6189.

Ashburn, P., El Mubarek, H.A.W., Bonar, J.M. and Redman-White, W. (2001) SiGe Heterojunction Bipolare Transistors on Insulator. In, Electrochemical Society Meeting, Seattle, USA,

Ashburn, P., Mubarek, H.A.W.El, Bonar, J.M. and Redman-White, W. (2001) SiGe heterojunction bipolar transistors on insulator. At Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, Washington , USA, Electrochemical Society, 433-444.

Bakewell, D. J and Morgan, Hywel (2001) Measuring the frequency dependent polarisability of colloidal particles from dielectrophoretic collection data. IEEE Transactions on Dielectrics and Electrical Insulation,, 8, (3), 566-571.

Benson, James, D'Halleweyn, Nele V., Redman-White, William, Easson, Craig A., Uren, Michael J., Faynot, Olivier and Pelloie, Jean-Luc (2001) A Physically Based Relation Between Extracted Threshold Voltage and Surface Potential Flat-Band Voltage for MOSFET Compact Modeling. IEEE Transactions on Electron Devices, 48, (5), 1019.

Bose, J V Subhas Chandra, Souza, M M De, Narayanan, E M Sankara, Ensell, G J, Pease, T J and Humphry, J (2001) A novel metal field plate edge termination for power devices. Microelectronics International, 32, 323-326.

Braithwaite, G, Grasbuy, T J, Palmer, M J, Prest, M J, Parry, C, Whall, T E, Parker, E H C and Waite, A W (2001) SiO.64 GEO.36/Si Heterojunction MOSFETS: Design and Evaluation.

Bruijn, M P, Ridder, M, DE Korte, P A J, Moktadir, Z, Wiegerink, R, Berenschot, E and Elwenspoek, M (2001) MICRO-MACHINING OF A CRYOGENIC IMAGING ARRAY OF TRANSITION EDGE X-RAY MICROCALORIMETERS. In, Sensor Technology Conference 2001, Enschede, The , Netherlands, 14 - 15 May 2001. , 179-184.

Coyle, S., Netti, M.C., Baumberg, J.J., Ghanem, M.A., Birkin, P.R., Bartlett, P.N. and Whittaker, D.M. (2001) Confined Plasmons in Metallic Nanocavities. PHYSI CAL REV IEW LETTERS, 87, (17), 176801-1.

Cui, L, Holmes, D and Morgan, H (2001) The dielectrophoretic levitation and separation of latex beads in microchips. Electrophoresis, 22, (18), 3893-3901.

D'Halleweyn, N., Benson, J., Swanenberg, M. and Redman-White, W. (2001) A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour. In, Proceedings of the Electrochemical Society Meeting, Washington DC, USA,

D'Halleweyn, N. V., Tiemeijer, L. F., Benson, J. and Redman-White, W. (2001) A Charge Model for SOI LDMOST with Lateral Doping Gradient. In, Proceedings of the International Symposium on Power Semiconductors, Devices & ICs, Osaka, Japan, , 291-294.

D'Halleweyn, N.V., Tiemeyer, L.F., Benson, J. and Redman-White, W. (2001) Charge Model for SOI LDMOST with lateral doping gradient. Proceedings IEEE International Symposium on Power Semiconductor Devices and IC's

Drysdale, T D, Blaikie, R J, Chong, H M H and Cumming, D R S (2001) Variable polarisation compensator using artificial dielectrics fo millimetre and submillimetre waves. Electronics Letters, 37, (3), 149-150.

Durrani, Z. A. K., Kamiya, T., Tan, Y. T., Mizuta, Hiroshi, Furuta, Y. and Ahmed, H. (2001) Nanocrystalline silicon point-contact single-electron transistor. At 2001 Silicon Nanoelectronics Workshop, Kyoto, , pp 38.

Elejalde, N., Grigore, L., Ensell, G. J., Evans, A. G. R., Lee, S. L. and Lee, M. A. (2001) Magnetically Actuated Microfabricated Devices for Application in Molecular Probe Chemistry.

Elejalde, N., Grigore, L., Ensell, G. J., Evans, A. G. R., Lee, S. L., Ogrin, F. Y. and Lee, M. A. (2001) Positive and Negative Photoresist as Thick Moulds for Electroplating High Aspect Ratio 3D Structures.

Elejalde, N., Grigore, L., Ensell, G.J., Evans, A.G.R., Lee, S.L. and Ogrin, F.Y. (2001) Positive and Negative Photoresist as Thick Moulds for Electroplating High Aspect Ratio 3D Structures. At Micromechanics Europe 2001, NMRC, Cork, Ireland, 04 - 06 Oct 2001.

Evans, G. , Mizuta, Hiroshi and Ahmed, H. (2001) Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime. Japanese Journal of Applied Physics, 40, 5837-5840.

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K. and Taniguchi, K. (2001) Characterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors. At 2001 International Conference on Solid State Devices and Materials, Tokyo,

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K. and Taniguchi, K. (2001) Electron transport via a few grain boundaries in heavily doped polycrystalline-silicon point contact devices. At 2001 Silicon Nanoelectronics Workshop, Kyoto, , 44.

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y.T., Kamiya, T., Durrani, Z.A.K., Ahmed, H. and Taniguchi, K. (2001) Carrier transport across a few grain boundaries in polycrystalline silicon. CREST FEMD News Letter, 2, (4), 5-6.

Furuta, Y. , Mizuta, Hiroshi, Nakazato, K. , Tan, Y. T. , Kamiya, T. , Durrani, Z. A. K. , Ahmed, H. and Taniguchi, K. (2001) Carrier transport across few grain boundaries in highly doped polycrystalline silicon. Japanese Journal of Applied Physics, 40, L615-L617.

Garner, D M, Udrea, F, Ensell, G, Sheng, K, Popescu, A E, Amaratunga, G A J and Milne, W I (2001) Failure Mechanisms of SOI High voltage LIGBTs and LDMOSFETs under Unclamped Inductive Switching. ISPSD 2001

Green, N.G. , Ramos, A, Gonzalez, A, Castellanos, A and Morgan, H (2001) Electrothermally induced fluid flow on microelectrodes. Journal of Electrostatics, 53, (2), 71-87.

Groot, C.H. de and Moodera, J.S. (2001) Growth and characterization of a novel In2Se3 structure. J. Appl Phys., 89, (8), 4336-4340.

Hakim, M. M. A. and Alam, A. H. M. Zahirul (2001) A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure. At First International Conference on Electrical and Computer Engineering (ICECE 2001) , 163-166.

Hakim, MMA and Alam, AHMZ (2001) A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure. At First International Conference on Electrical and Computer Engineering (ICECE 2001), Dhaka, Bangladesh, , 163-166.

Hall, S., Lamb, A. C., Bain, M., Armstrong, B. M., Gamble, H., Murabek, H. A. W. and Ashburn, P. (2001) SiGe HBTs on Bonded Wafer Substrates. Microelectronic Engineering, 59, 449-454.

Hiett, BP, Generowicz, JM, Cox, SJ, Molinari, M, Beckett, D, Parker, GJ and Thomas, KS (2001) FINITE ELEMENT MODELLING OF PHOTONIC CRYSTALS: 1st. PREP 2001 Conference Publication EPSRC, 87-88.

Holmes, David and Morgan, Hywel (2001) Particle focusing and separation using dielectrophoresis in a microfluidic device, Kluwer Academic Publishers

Houlihan, R, Kukharenka, A, Gindila, M and Kraft, M (2001) Analysis and design of a capacitive accelerometer based on an electrostatically levitated microdisk. SPIE 2001 Symposium on Micromachining and Microfabrication, 277-286.

Houlihan, Ruth and Kraft, Michael (2001) Modelling of an accelerometer based on a levitated proof mass. In, Micromechanics Europe, Cork, Ireland, , 313-316.

Houlihan, Ruth, Kukarenka, A, Gindila, M and Kraft, Michael (2001) Analysis and design of a capacitive accelerometer based on an electrostatically levitated micro-disk. Proceedings SPIE Conference on Micromechanics Europe, Cork, Ireland, , 305-308.

Hughes, M.P , Morgan, Hywel and Rixon, F.J (2001) Dielectrophoretic Manipulation and Characterisation of Herpes SimplexVirus-1 Capsids. European Biophysics Journal, 30, (4), 268-272.

Kamiya, T., Tan, Y. T. , Furuta, Y., Mizuta, Hiroshi, Durrani, Z. A. K. and Ahmed, H. (2001) Carrier transport in ultra-thin nano/polycrystalline silicon films and nanowires. At 2001 Spring Meeting of Materials Research Society , pp A16.2.1-A16.2.6.

Kraft, M and Gaura, E (2001) Intelligent control for a micromachined tunneling accelerometer. In, International MEMS Workshop, , 738-742.

Kraft, M, Redman-White, W and Mokhtari, M E (2001) Closed loop micromachined sensors wsith higher order SD-Modulators. Proceedings 4th Conference on Modeling and Simulation of Microsystems, 104-107.

Kraft, Michael, Farooqui, Mateen M and Evans, Alan G R (2001) Modelling and design of an electrostatically levitated disc for inertial sensing applications. Journal of Micromechanics and Microengineering, 11

Kraft, Michael, Redman-White, W and Mokhtari, M.E (2001) Closed loop micromachined sensors with high order SD-Modulators. At Proceedings Conference on Modelling and Simulation of Microsystems, Hilton Head Island , USA, , 104-107.

Lamb, A. C., Riley, L. S., Hall, S., Kunz, V.D., Groot, C. H. de and Ashburn, P. (2001) A 50nm channel vertical MOSFET concept incorporating a retrograde channel and a dielectric pocket. ESSDERC 2001 Frontier Group, 347-350.

Lee, M. S. L., Tenbroek, B. M., Redman-White, W., Benson, J. and Uren, M. J. (2001) A Physically Based Compact Model of Partially Depleted MOSFETs for Analog Circuit Stimulation. IEEE Journal of Solid-State Circuits, 36, (1), 110-121.

Lee, M.S.L., Tenbroek, B.M., Redman-White, W., Benson, J. and Uren, M.J. (2001) A Physically Based Compact Model of Partially Depleted SOI MOSFETs for Analogue Circuit Simulation. IEEE J Solid State Circuits, 36, (1), 110-121.

Lockyer, D S, Vardaxoglou, J C and Ensell, G J (2001) A study of doped patch and dipole antenna arrays with photonics MWP 2000 (Cat No. 00EX430). , 152-5.

Lukyanchikova, N, Garbar, N, Petrichuk, M, Schiz, J F W and Ashburn, P (2001) The influence of BF2 and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base. IEEE Transactions on Electron Devices, 48, (12), 2808-2815.

Marsh, C D, Nash, G R, Schiz, J F W, Booker, G R and Ashburn, P (2001) TEM and SIMS study of the behaviour of fluorine in as-deposited amorphous and polysilicon annealed at 600 to 950C. At Microscopy of Semiconducting Materials Conference, Oxford, UK,

Mistry, K., Redman-White, W., Benson, J. and D'Halleweyn, N. (2001) Low Power Multi-Gigahertz Divider Architectures in SOI CMOS Employing Series Current Reuse. In, Proceedings of the European Conference on Circuit theory and Design, Helsinki, Finland,

Mizuta, Hiroshi, Furuta, Y., Evans, G., Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K. and Ahmed, H. (2001) Local disorder effects on electron transport in silicon nanostructures. At TRENDS IN NANOTECHNOLOGY 2001, Segovia,

Mizuta, Hiroshi, Muller, H. O. , Tsukagoshi, K. , Williams, D. , Durrani, Z. , Irvine, A. , Amakawa, S. , Evans, G. , Nakazato, K. and Ahmed, H. (2001) Nanoscale Coulomb blockade memory and logic devices. Nanotechnology, 12, 155-159.

Mizuta, Hiroshi, Wagner, M. and Nakazato, K. (2001) The role of tunnel barriers in Phase-state Low Electron-number Drive Transistors (PLEDTRs). IEEE Transactions on Electron Devices, ED-48, 1103-1108.

Mizuta, Hiroshi, Wagner, Mathias and Nakazato, Kazuo (2001) The role of tunnel barriers in Phase-State Low Electron-Number Drive Transistors (PLEDTRs). IEE Trans Electron Devices, 48, (6), 1103-1108.

Moktadir, Z and Sato, K (2001) Instability in Si(110) etched with tetramethyl ammonium hydroxide. J. Appl. Phys., 89, 3242.

Moktadir, Z and Sato, K (2001) Unstable etching of Si(110) with potassium hydroxide. Phys. Rev. B, 64, 033309.

Morgan, H, Izquierdo, AG, Bakewell, DJ, Green, NG and Ramos, A (2001) The dielectrophoretic and travelling wave forces for interdigitated electrode arrays: analytical solution using Fourier series. J.Phys.D: Appl. Phys., 34, 1553-1561.

Morgan, Hywel, Izquierdo, A.G, Bakewell, D.J, Green, Nicolas and Ramos, A. (2001) The dielectrophoretic and travelling wave forces for interdigitated electrode arrays: analytical solution using Fourier series. Journal of Physics D: Applied Physics, 34, 1553-1561.

Muller, H. O. , Williams, D. and Mizuta, Hiroshi (2001) Design optimization of Coulomb blockade devices. VLSI Design, 13, 193-198.

Nakazato, K., Itoh, K., Mizuta, Hiroshi and Ahmed, H. (2001) Silicon Stacked Tunnel Transistor PLED and its Applications to DRAM. At FSRC Science and Technology of Silicon Materials, La Jolla,

Netti, M.C., Harris, A., Baumberg, J.J., Whittaker, D.M., Charlton, M.B.D., Zoorob, M.E. and Parker, G.J. (2001) Optical Trirefringence in Photonic Crystal Waveguides. PHYSICAL REVIEW LETTERS, 86, (8), 1526-1529.

Niblock, T, Kraft, M and Sehr, H (2001) Design criteria for a hybrid nano/photolithography system. , 305-308.

Palmer, M. J., Braithwaite, G., Grasby, T. J., Phillips, P. J., Prest, M. J., Parker, E. H. C., Whall, T. E., Parry, C. P., Waite, A. M., Evans, A. G. R., Roy, S., Watling, J. R., Kaya, S. and Asenov, A. (2001) Effective mobilities in pseudomorphic Si/SiGe/ p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, Volume, (Number)

Palmer, M. J., Braithwaite, G., Prest, M. J., Parker, E.H.C., Whall, T. E., Zhao, Y. P., Kaya, S., Watling, J. R., Asenov, A., Barker, J. R., Waite, A. M. and Evans, A.G.R. (2001) Enhanced Velocity Overshoot and Transconductance in Si/Si 0.64 Ge 0.36/Si pMOSFETs - Predictions for Deep Submicron Devices.

Palmer, M. J., Braithwaite, G., Prest, M.J., Parker, E. H. C., E.Whall, T., Zhao, Y. P., Kaya, S., Watling, J. R., Asenov, A., Barker, J. R., Waite, A. M. and Evans, A. G. R. (2001) Enhanced Velocity Overshoot and Transconductance in Si/Si0.64Ge0.36/Si pMOSFETs - Predictions for Deep Submicron Devices.

Palmer, M.J., Braithwaite, G., Grasby, T.J., Phillips, P.J., Prest, M.J., Parker, E.H.C., Whall, T.E., Parry, C.P., Waite, A.M., Evans, A.G.R., Roy, S., Watling, J.R., Kaya, S. and Asenov, A. (2001) UNSPECIFIED Applied Physics Letters, 78, (10)

Parker, Greg (2001) Encyclopedia of Materials: Science and Technology. In, Guide-Wave Optical Communications: Materials. , Elsevier, 3703-3707.

Parker, Greg (2001) Guided-Wave Optical Communications: Materials, Elsevier

Pooley, D. M. , Ahmed, H. , Mizuta, Hiroshi and Nakazato, K. (2001) Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers. Journal of Applied Physics, 90, 4772-4776.

Potts, A, Parker, G J, Baumberg, J J and deGroot, PAJ (2001) CMOS compatible fabrication methods for submicron Josephson junction qubits. IEE Proc Sc Meas Technology, 148, (5), 225-228.

Potts, A, Routley, P R, Parker, G J and de Groot, P A J (2001) Novel fabrication methods for submicrometer Josephson junction qubits. Journal of Materials Science : Materials in Electronics, (12), 289-293.

Prest, M. J., Palmer, M. J., Braithwaite, G., Grasby, T. J., Phillips, P. J., Mironov, O. A., Parker, E. H. C., Whall, T. E., Waite, A. M. and Evans, A. G. R. (2001) Si/Si0.64Ge0.36/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise.

Prest, M. J., Palmer, M. J., Grasby, T. J., Phillips, P. J., Mironov, O. A., Parker, E. H. C., Whall, T. E., Waite, A. M., Evans, A. G. R., Watling, J. R., Asenov, A. and Barker, J. R. (2001) Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science & Engineering

Rahim, A I A, Marsh, C D, Ashburn, P and Booker, G R (2001) Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus doped polysilicon emitter contacts. IEEE Transactions on Electron Devices, 48, (11), 2506-2513.

Ramos, Antonio, Gonzalez, A, Green, Nicolas, Morgan, Hywel and Castellanos, A (2001) Comment on Theoretical model of electrode polarisation and AC electroosmotic fluid flow in planar electrode arrays. Journal of Colloid and Interface Science, 243, (1), 265-266.

Redman-White, W. and Leenaerts, D. W. M. (2001) 1/f Noise in Passive CMOS Mixers for Low and Zero IF Integrated Receivers. In, Proceedings of the European Solid State Circuits Conference, Villach, Austria,

Reynolds, A L, Chong, H M H, Thayne, I G, Arnold, J M and Maagt, P J I (2001) Analysis of membrane support structures for integrated antenna usage on two-dimensional photonic-bandgap structures. IEEE Transactions on Microwave Theory and Techniques, 49, (7), 1254-1261.

Sandhu, J.S., Heberle, A.P., Baumberg, J.J. and Cleaver, J.R.A. (2001) Gateable Suppression of Spin Relaxation in Semiconductors. PHYSICAL REVIEW LETTERS, 86, (10), 2150-2153.

Savvidis, P.G., Ciuti, C., Baumberg, J.J., Whittaker, D.M., Skolnick, M. and Roberts, J.S. (2001) Off-branch polaritons and multiple scattering in semiconductor microcavities. PHYSICAL REVIEW B, 64, (075311), 075311-1.

Schiz, J.F.W., Bonar, J.M., Lamb, A.C., Cristiano, F., Ashburn, P., Hall, S. and Hemment, P.L.F. (2001) Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors. Journal of Microelectronics and Reliability, 41, (2), 273-279.

Schiz, J.F.W., Lamb, Andrew C., Cristiano, Fuccio, Bonar, J.M., Ashburn, Peter, Hall, Stephen and Hemment, Peter L. F. (2001) Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy. IEEE Transactions on Electron Devices, 48, (11), 2492-2499.

Sidek, R M, Straube, U N, Waite, A M, Evans, A G R, Parry, C, Phillips, P, Whall, T E and Parker, E H C (2001) SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide. Semiconductor Science and Technology

Stefanou, S., Hamel, J.S., Bain, M., Baine, P., Armstrong, B. M., Gamble, H. S., Mauntel, Rick and Huang, Margaret (2001) Physics and Compact Modeling of SOI substrates with Buried Ground Planes (GPSOI) for Substrate Noise Suppression. UNSPECIFIED

Straube, U. N., Evans, A. G. R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A. (2001) Technical Note on the Mobility Extraction for HMOSFETs. Solid-State Electronics, 45

Straube, U.N., Waite, A.M., Evans, A.G.R., Nejim, A. and Hemment, P.L.F. (2001) UNSPECIFIED Electronics Letters, 37, (25)

Uchino, T, Miyauchi, A and Shiba, T (2001) MOSFETs with ultrashallow junction and minimum drain area formed by using solid-phase diffusion from SiGe. IEEE Trans. Electron Devices, 48, 1406-1411.

Uppall, Suresh, Willoughby, A F W, Bonar, Janet M, Evans, Alan G R, Cowern, Nick E B, Morris, Richard and Dowsett, Mark G (2001) Ion-implantation and diffusion behaviour of boron in germanium. Physica B, 308, 525-528.

Uppall, Surresh, Willoughby, Arthur F W, Bonar, Janet M, Evans, Alan G R, Cowern, Nick E B, Morris, Richard and Dowsett, Mark G (2001) Diffusion of ion-implanted boron in germanium. Journal of Applied Physics, 90, (8), 4293-4295.

Zhang, T, Morgan, Hywel, Riehle, M and Curtis, A (2001) Measuring particle-substrate distance with Surface Plasmon Resonance Microscopy. Journal of Optics A: Pure and Applied Optics, 3, (5), 333-337.

de Planque, M R R, Goormaghtigh, E, Greathouse, D V, Koeppe II, R E, Kruijtzer, J A W, Liskamp, R M J, de Kruijff, B and Killian, J A (2001) Sensitivity of Single Membrane-Spanning Alpha-Helical Peptides to Hydrophobic Mismatch with a Lipid Bilayer: Effects on Backbone Structure, Orientation, and Extent of Membrane Incorporation. Biochemistry, 40, (16), 5000-5010.

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