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Development of channel waveguide lasers in Nd3+-doped chalcogenide (Ga:La:S) glass through photoinduced material modification

Development of channel waveguide lasers in Nd3+-doped chalcogenide (Ga:La:S) glass through photoinduced material modification
Development of channel waveguide lasers in Nd3+-doped chalcogenide (Ga:La:S) glass through photoinduced material modification
We report the development of a waveguide laser source in a neodymium-doped chalcogenide (Ga:La:S) glass. Channel waveguide structures were directly written via above band gap (λ=244 nm) illumination provided by a focused UV-laser beam with fluencies 1.5–150 J/cm2. Effects of photoinduced material modification in the form of surface compaction and photodensification were evident. Characterization revealed a low threshold waveguide laser with emission at 1075 nm and slope efficiency of 17%. The active device was spatially single mode and exhibited laser operation with 8.6 mW peak power and attenuation <0.5 dB cm–1.
0003-6951
3708-3710
Mairaj, A.K.
69f81e26-b09f-4c34-83ee-4388f94fa147
Riziotis, C.
a2037f27-c711-46c3-bec4-2293fca6f0e0
Chardon, A.M.
0ed30ece-5a60-4ed1-a21b-38cb0da4fd6c
Smith, P.G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Mairaj, A.K.
69f81e26-b09f-4c34-83ee-4388f94fa147
Riziotis, C.
a2037f27-c711-46c3-bec4-2293fca6f0e0
Chardon, A.M.
0ed30ece-5a60-4ed1-a21b-38cb0da4fd6c
Smith, P.G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Mairaj, A.K., Riziotis, C., Chardon, A.M., Smith, P.G.R., Shepherd, D.P. and Hewak, D.W. (2002) Development of channel waveguide lasers in Nd3+-doped chalcogenide (Ga:La:S) glass through photoinduced material modification. Applied Physics Letters, 81 (20), 3708-3710. (doi:10.1063/1.1520698).

Record type: Article

Abstract

We report the development of a waveguide laser source in a neodymium-doped chalcogenide (Ga:La:S) glass. Channel waveguide structures were directly written via above band gap (λ=244 nm) illumination provided by a focused UV-laser beam with fluencies 1.5–150 J/cm2. Effects of photoinduced material modification in the form of surface compaction and photodensification were evident. Characterization revealed a low threshold waveguide laser with emission at 1075 nm and slope efficiency of 17%. The active device was spatially single mode and exhibited laser operation with 8.6 mW peak power and attenuation <0.5 dB cm–1.

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Published date: 2002
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Identifiers

Local EPrints ID: 13762
URI: http://eprints.soton.ac.uk/id/eprint/13762
DOI: doi:10.1063/1.1520698
ISSN: 0003-6951
PURE UUID: fdabda6a-e8aa-45e4-8dad-43c5649b804a
ORCID for P.G.R. Smith: ORCID iD orcid.org/0000-0003-0319-718X
ORCID for D.P. Shepherd: ORCID iD orcid.org/0000-0002-4561-8184
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 01 Jan 2005
Last modified: 16 Mar 2024 02:49

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Contributors

Author: A.K. Mairaj
Author: C. Riziotis
Author: A.M. Chardon
Author: P.G.R. Smith ORCID iD
Author: D.P. Shepherd ORCID iD
Author: D.W. Hewak ORCID iD

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