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Direct-UV-written buried channel waveguide lasers in direct-bonded intersubstrate ion-exchanged neodymium-doped germano-borosilicate glass

Direct-UV-written buried channel waveguide lasers in direct-bonded intersubstrate ion-exchanged neodymium-doped germano-borosilicate glass
Direct-UV-written buried channel waveguide lasers in direct-bonded intersubstrate ion-exchanged neodymium-doped germano-borosilicate glass
We report a technique for producing single-mode buried channel waveguide lasers in neodymium-doped SiO2:GeO2:B2O3:Na2O (SGBN) glass. Direct bonding forms the basis of this process, providing a buried waveguide layer in the photosensitive SGBN material into which channel confinement can be directly written with a focused UV beam. Characterization of a 7.5-mm-long device was performed using a Ti:Sapphire laser operating at 808 nm and the resultant 1059 nm channel waveguide laser output exhibited single-mode operation, milliwatt-order lasing thresholds, and propagation losses of <0.3 dB cm–1.
0003-6951
3522-3524
Gawith, C.B.E.
926665c0-84c7-4a1d-ae19-ee6d7d14c43e
Fu, A.
b5da22be-79a6-4c9c-af25-00c02bbace16
Bhutta, T.
6e32b59c-cd48-4454-9378-a7a8ab10d28e
Hua, P.
92fa76e2-970b-45f5-a459-d9f95e735303
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Taylor, E.R.
d9a73a87-6abd-4a1e-a462-84549c667d19
Smith, P.G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Milanese, D.
ecb96980-ac53-454f-b513-cc5e6470fe24
Ferraris, M.
6488d6f4-42fe-485b-a61a-9a4e003c337b
Gawith, C.B.E.
926665c0-84c7-4a1d-ae19-ee6d7d14c43e
Fu, A.
b5da22be-79a6-4c9c-af25-00c02bbace16
Bhutta, T.
6e32b59c-cd48-4454-9378-a7a8ab10d28e
Hua, P.
92fa76e2-970b-45f5-a459-d9f95e735303
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Taylor, E.R.
d9a73a87-6abd-4a1e-a462-84549c667d19
Smith, P.G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Milanese, D.
ecb96980-ac53-454f-b513-cc5e6470fe24
Ferraris, M.
6488d6f4-42fe-485b-a61a-9a4e003c337b

Gawith, C.B.E., Fu, A., Bhutta, T., Hua, P., Shepherd, D.P., Taylor, E.R., Smith, P.G.R., Milanese, D. and Ferraris, M. (2002) Direct-UV-written buried channel waveguide lasers in direct-bonded intersubstrate ion-exchanged neodymium-doped germano-borosilicate glass. Applied Physics Letters, 81 (19), 3522-3524. (doi:10.1063/1.1519103).

Record type: Article

Abstract

We report a technique for producing single-mode buried channel waveguide lasers in neodymium-doped SiO2:GeO2:B2O3:Na2O (SGBN) glass. Direct bonding forms the basis of this process, providing a buried waveguide layer in the photosensitive SGBN material into which channel confinement can be directly written with a focused UV beam. Characterization of a 7.5-mm-long device was performed using a Ti:Sapphire laser operating at 808 nm and the resultant 1059 nm channel waveguide laser output exhibited single-mode operation, milliwatt-order lasing thresholds, and propagation losses of <0.3 dB cm–1.

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Published date: 28 October 2002
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Identifiers

Local EPrints ID: 13773
URI: http://eprints.soton.ac.uk/id/eprint/13773
DOI: doi:10.1063/1.1519103
ISSN: 0003-6951
PURE UUID: ddb89d71-82b4-4697-ae5c-8462d4c8f3e4
ORCID for C.B.E. Gawith: ORCID iD orcid.org/0000-0002-3502-3558
ORCID for D.P. Shepherd: ORCID iD orcid.org/0000-0002-4561-8184
ORCID for P.G.R. Smith: ORCID iD orcid.org/0000-0003-0319-718X

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Date deposited: 01 Jan 2005
Last modified: 16 Mar 2024 03:12

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Contributors

Author: C.B.E. Gawith ORCID iD
Author: A. Fu
Author: T. Bhutta
Author: P. Hua
Author: D.P. Shepherd ORCID iD
Author: E.R. Taylor
Author: P.G.R. Smith ORCID iD
Author: D. Milanese
Author: M. Ferraris

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