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Laser characteristics at 1535 nm and thermal effects of an Er:Yb phosphate glass microchip pumped by Ti:sapphire laser

Laser characteristics at 1535 nm and thermal effects of an Er:Yb phosphate glass microchip pumped by Ti:sapphire laser
Laser characteristics at 1535 nm and thermal effects of an Er:Yb phosphate glass microchip pumped by Ti:sapphire laser
An Er:Yb codoped phosphate glass microchip laser has been studied under pumping with a Ti:sapphire laser ranging from 945 to 990 nm. The characteristics (threshold, slope efficiency) are first described for an optimized laser. The gain spectrum is calculated for the transition 4I13/2 to 4I15/2 around 1535 nm from fundamental spectroscopic data and from experimental results. Red-shift effect on the frequency of a single mode is experimentally observed when the pump power is increased, originating from thermal effects. Temperature inside the microchip cavity and thermal expansion coefficient were determined by employing the intensity ratio of two green upconversion emission line centered at 530 and 554 nm, respectively, which quantitatively explain this red shift.
0030-4018
301-313
Cai, Z.P.
790d2a11-498e-4862-8e7a-42651c7d53b8
Chardon, A.
6e99d332-9c21-4281-b36c-80fdfe44f452
Xu, H.Y.
8852bedd-a501-41db-896a-43f93e4f04d8
Feron, P.
68bc1f5d-c632-4f18-abce-b4e568ba0d08
Stephan, G.
750e4f86-26bc-4940-a9f4-348d74775e6b
Cai, Z.P.
790d2a11-498e-4862-8e7a-42651c7d53b8
Chardon, A.
6e99d332-9c21-4281-b36c-80fdfe44f452
Xu, H.Y.
8852bedd-a501-41db-896a-43f93e4f04d8
Feron, P.
68bc1f5d-c632-4f18-abce-b4e568ba0d08
Stephan, G.
750e4f86-26bc-4940-a9f4-348d74775e6b

Cai, Z.P., Chardon, A., Xu, H.Y., Feron, P. and Stephan, G. (2002) Laser characteristics at 1535 nm and thermal effects of an Er:Yb phosphate glass microchip pumped by Ti:sapphire laser. Optics Communications, 203 (3-6), 301-313. (doi:10.1016/S0030-4018(02)01114-8).

Record type: Article

Abstract

An Er:Yb codoped phosphate glass microchip laser has been studied under pumping with a Ti:sapphire laser ranging from 945 to 990 nm. The characteristics (threshold, slope efficiency) are first described for an optimized laser. The gain spectrum is calculated for the transition 4I13/2 to 4I15/2 around 1535 nm from fundamental spectroscopic data and from experimental results. Red-shift effect on the frequency of a single mode is experimentally observed when the pump power is increased, originating from thermal effects. Temperature inside the microchip cavity and thermal expansion coefficient were determined by employing the intensity ratio of two green upconversion emission line centered at 530 and 554 nm, respectively, which quantitatively explain this red shift.

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Published date: 2002

Identifiers

Local EPrints ID: 13793
URI: http://eprints.soton.ac.uk/id/eprint/13793
ISSN: 0030-4018
PURE UUID: 9d72c4e8-d068-46db-aa23-51d39ebee859

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Date deposited: 22 Dec 2004
Last modified: 15 Mar 2024 05:12

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Contributors

Author: Z.P. Cai
Author: A. Chardon
Author: H.Y. Xu
Author: P. Feron
Author: G. Stephan

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