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Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures

Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures
Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures
Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped quantum well samples by using a pump–probe three-beam technique at 4 K to room temperature. At high pump intensities, an absorptive signal of sub-nanosecond lifetime was detected following a normal positive transmissive signal of picosecond lifetime. This absorptive signal is believed to be caused by the absorption from the free electrons pumped from the ground subband to the continuum conduction band in the barrier layers associated with incoherent multi-photon process. The intersubband lifetimes and free carrier effects play an important role in optically pumped multiple-quantum-well far infrared lasers. A three-level electron transition model is built to simulate the process, which agrees very well with the experimental data.
645-650
Tan, H.A.
26280f50-8d13-4303-9cb9-e512586b8622
Xin, Z.J.
bc46917f-364a-498b-ad97-4241cabdeee4
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Wells, J.P.R.
1a5412f6-880f-4bbf-a3e0-f85db5f01675
Bradley, I.V.
96c10086-30d1-477c-b240-e5a98efe5bb9
Tan, H.A.
26280f50-8d13-4303-9cb9-e512586b8622
Xin, Z.J.
bc46917f-364a-498b-ad97-4241cabdeee4
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Wells, J.P.R.
1a5412f6-880f-4bbf-a3e0-f85db5f01675
Bradley, I.V.
96c10086-30d1-477c-b240-e5a98efe5bb9

Tan, H.A., Xin, Z.J., Rutt, H.N., Wells, J.P.R. and Bradley, I.V. (2002) Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures. Semiconductor Science and Technology, 17 (7), 645-650. (doi:10.1088/0268-1242/17/7/301).

Record type: Article

Abstract

Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped quantum well samples by using a pump–probe three-beam technique at 4 K to room temperature. At high pump intensities, an absorptive signal of sub-nanosecond lifetime was detected following a normal positive transmissive signal of picosecond lifetime. This absorptive signal is believed to be caused by the absorption from the free electrons pumped from the ground subband to the continuum conduction band in the barrier layers associated with incoherent multi-photon process. The intersubband lifetimes and free carrier effects play an important role in optically pumped multiple-quantum-well far infrared lasers. A three-level electron transition model is built to simulate the process, which agrees very well with the experimental data.

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Published date: 2002

Identifiers

Local EPrints ID: 13811
URI: http://eprints.soton.ac.uk/id/eprint/13811
PURE UUID: 6b90257f-fddf-44f9-ba7f-19ad227a3268

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Date deposited: 18 Jan 2005
Last modified: 15 Jul 2019 19:34

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