Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light
Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light
An enhanced photosensitivity was observed in 30 mol% Ge-doped fibre and 30 mol% Ge-doped, 1 mol% Sn-codoped fibre when exposed to high-intensity (73-86 GW/cm2) femtosecond laser pulses at 264 nm.
1437-1439
Dragomir, A.
6af48329-31cc-4b66-a598-d6b1e22a032b
Nikogosyan, D.N.
37237f25-119d-427f-8b57-c6bfafe1d079
Brambilla, G.
815d9712-62c7-47d1-8860-9451a363a6c8
2003
Dragomir, A.
6af48329-31cc-4b66-a598-d6b1e22a032b
Nikogosyan, D.N.
37237f25-119d-427f-8b57-c6bfafe1d079
Brambilla, G.
815d9712-62c7-47d1-8860-9451a363a6c8
Dragomir, A., Nikogosyan, D.N. and Brambilla, G.
(2003)
Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light.
Electronics Letters, 39 (20), .
(doi:10.1049/el:20030942).
Abstract
An enhanced photosensitivity was observed in 30 mol% Ge-doped fibre and 30 mol% Ge-doped, 1 mol% Sn-codoped fibre when exposed to high-intensity (73-86 GW/cm2) femtosecond laser pulses at 264 nm.
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Published date: 2003
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Local EPrints ID: 13834
URI: http://eprints.soton.ac.uk/id/eprint/13834
ISSN: 0013-5194
PURE UUID: 331f1c76-6ab1-4bb7-9203-72ba9a609c4b
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Date deposited: 03 Jan 2005
Last modified: 16 Mar 2024 03:21
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Author:
A. Dragomir
Author:
D.N. Nikogosyan
Author:
G. Brambilla
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